DIODE MODULE
DD(KD)100HB120/160
UL;E76102 M）
（
Power Diode Module
DD100HB
series are designed for various rectifier circuits.
DD100HB
has two diode chips connected in series and the mounting base is elctrically
isolated from elements for simple heatsink construction. Wide voltage rating up to,
1,600V is avaiable for various input voltage.
mounting base
●
Two elements in a package for simple (single and three phase) bridge
connections
●
Highly reliable glass passivated chips
●
High surge current capability
（Applications）
Various rectifiers, Battery chargers, DC motor drives
３
93.5MAX
80
26MAX
3
2
+
–
1
2- 6.5
●
Isolated
13
~
16.5
23
23
3M5
30MAX
DD
２
２
３
１
１
KD
21
Unit：a
■Maximum
Ratings
Symbol
V
RRM
V
RSM
Symbol
I
F AV）
（
I
F (RMS)
I
FSM
It
2
（Tj＝25℃
unless otherwise specified）
Item
Ratings
DF100HB120
1200
1350
Conditions
Single phase, half wave, 180°
conduction, Tc：111℃
Single phase, half wave, 180°
conduction, Tc：111℃
1
cycle,
／
2
DD100HB160
1600
1700
Ratings
100
155
1800/2000
16500
−40
to
＋150
−40
to
＋125
Unit
V
V
Unit
A
A
A
A
2
S
℃
℃
V
N�½�m
（㎏f�½�B）
g
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Item
Average Forward Current
R.M.S. Forward Current
Surge Forward Current
It
2
50/60H
Z
, peak value, non-repetitive
Value for one cycle of surge current
Tj
Tstg
V
ISO
Junction Temperature
Storage Temperature
Isolation Voltage
Mounting
Torque
Mass
Mounting
（M6）
Terminal
（M5）
A.C.1minute
Recommended Value 2.5-3.9（25-40）
Recommended Value 1.5-2.5（15-25）
2500
4.7（48)
2.7（28)
170
■Electrical
Characteristics
Symbol
I
RRM
V
FM
Item
Repetitive Peak Reverse Current, max.
Forward Voltage Drop, max.
Conditions
at V
DRM
, single phase, half wave. Tj＝150℃
Foward current 320A，Tj＝25℃，Inst. measurement
Junction to case
Ratings
30
1.35
0.30
Unit
mA
V
℃/W
Rth j-c） Thermal Impedance, max.
（
SanRex
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
SANREX [ SANREX CORPORATION ]
