(
)
PK PD,PE,KK 130F
On-State Voltage max
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Gate Characteristics
2�
2�
Peak Forward Gate Voltage(10V)�
1�
10
3
10
5�
5�
2�
2�
0�
2
10
10
5�
5�
125℃�25℃� -30℃�
2�
Maximum Gate Voltage that will not trigger any unit
2�
�
-
101�
10
1�
2�
3�
�
1.0�
0.5�
1.5� � 2.0�
2.5�
3.5�
10
2�
5� 10
2�
5� 10
2�
5�
On-State Voltage(V)�
Gate Curren(t mA)�
Average On-State Current Vs Power Dissipation�
(Single phase half wave)
Average On-State Current Vs Maximum Allowable�
Case Temperature(Single phase half wave)
130�
260�
D.C.
240�
220�
200�
180�
160�
140�
Per one element
Per one element
120�
110�
100�
2
θ=180゜�
θ=120゜�
θ=90゜�
θ=60゜�
360。�
: Conduction Angle
90�
80�
70�
60�
50�
120�
2
θ=30゜�
100�
80�
60�
40�
20�
0�
360。�
θ=30゜� θ=60゜�
θ=120゜�θ=180゜�
θ=90゜�
D.C.
: Conduction Angle
20� 40� 60� 80�100�120�140�160�180�200�220�
0� 20� 40� 60�80�100�120� 180�200�220�
140�160�
Average On-State Curren(t A)�
Average On-State Curren(t A)�
Surge On-State Current Rating�
(Non-Repetitive)�
Transient Thermal Impedance
5000�
Per one element
0.2�
Junction to case
Per one element
Tj=25℃ start
4000�
60Hz
50Hz
3000�
�
0.1�
2000�
1000�
0�
0� 0
10
-
-
-
0�
1
103�
102�
101�
10
10
1�
2
2�
5�
10
2�
5�
10
�
Time t(sec)�
Time(cycles)�
B6;Six pulse bridge connection�
W3;Three phase�
Output Current
W1;Bidirectional connection
bidiretional connection
B2;Two Pluse bridge connection
Conduction Angle 180゜�
Id(Ar.m.s.)�
W3
90�
Id(Aav.)�
1000�
800�
600�
400�
Id(Aav.)�
B6
Id(Ar.m.s.)�
Rth:0.5℃/W
Rth:0.4℃/W
Rth:0.3℃/W
Rth:0.5℃/W
Rth:0.4℃/W
Rth:0.3℃/W
Rth:0.2℃/W
B2
100�
90�
Rth:0.5℃/W
Rth:0.4℃/W
Rth:0.3℃/W
Rth:0.2℃/W
Rth:0.1℃/W
Rth:0.2℃/W
Rth:0.1℃/W
Rth:0.05℃/W 110�
100�
110�
Rth:0.1℃/W
Rth:0.05℃/W
W1
90�
Rth:0.05℃/W
100�
110�
200�
0�
120�
125�
120�
125�
120�
125�
0�
100� 200� 300�
Output Curren(t A)�
0�20�40�60�80�100�120�
Ambient Temperature(℃)�
0� 20�40�60�80�100�120�
0� 20�40�60�80�100�120�
Ambient Temperature(℃)� Ambient Temperature(℃)�
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