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KK55F160 参数 Datasheet PDF下载

KK55F160图片预览
型号: KK55F160
PDF下载: 下载PDF文件 查看货源
内容描述: 晶闸管模块 [THYRISTOR MODULE]
分类和应用:
文件页数/大小: 2 页 / 122 K
品牌: SANREX [ SANREX CORPORATION ]
 浏览型号KK55F160的Datasheet PDF文件第1页  
Transient Thermal Impedance
θ
(℃/W)
j-c
Surge On-State Current
(A)
;;
PK(PD,PE,KK)55F
Gate Characteristics
3
On-State Voltage max
Peak Gate Current
(3A)
On-State Current
(A)
Peak Forward Gate Voltage
(10V)
Av
er
ag
e
Gate Voltage
(V)
Pe
Po ak G
we a
( te
r
Ga
10
te
W
Po
we
r
3W
2
125℃
25℃
−30℃
Maximum Gate Voltage that will not trigger any unit
−1 1
4
Gate Current
(mA)
On-State Voltage
(V)
Allowable Case Temperature
(℃)
10
10
Average On-State Current Vs Power Dissipation
(Single phase half wave)
Per one element
10
10
10
10
Average On-State Current Vs Maximum Allowable
Case Temperature
(Single phase half wave)
Per one element
2
Power Dissipation
(W)
D.C.
360
θ
=180゜
θ
=120゜
θ
=90゜
: Conduction Angle
θ
=60゜
θ
=30゜
2
360
: Conduction Angle
θ
θ
θ
=30゜ =60゜ =90゜ =120゜ =180゜
θ
θ
D.C.
9 10
0 0
Average On-State Current
(A)
Average On-State Current
(A)
20
00
Surge On-State Current Rating
(Non-Repetitive)
Per one element
T = 5 start
�½�2 ℃
10
Transient Thermal Impedance
Per one element
09
10
50
08
07
06
05
04
03
02
Junction to case
10
00
60Hz
50Hz
50
01
−3
−2
−1
0
2
Time
(Cycles)
Time
t
sec)
Total Power Dissipation
(W)
Id Ar.m.s.)
W3
Conduction Angle 180゜
B6
Rth:1.0℃/W
Rth:0.8℃/W
Rth:0.6℃/W
Rth:0.4℃/W
Rth:0.2℃/W
Id Aav.)
Id Aav.)
40
Id Ar.m.s.)
30
20
B2
W1
10
80
10
10
10
10
15
Rth:1.0℃/W
Rth:0.8℃/W
Rth:0.6℃/W
Rth:0.4℃/W
Rth:0.2℃/W
Rth:0.1℃/W
10
10
10
15
Rth:0.8℃/W
Rth:0.6℃/W
Rth:0.4℃/W
Rth:0.2℃/W
Rth:0.1℃/W
10
10
10
10
15
10
10
Output Current
(A)
Ambient Temperature
(℃)
Ambient Temperature
(℃)
Ambient Temperature
(℃)
Allowable Case Temperature
(℃)
50
Output Current
W1 Bidirectional connection
B2 Two Pluse bridge connection
B ; pulse bridge connection
6 Six
W3 Three phase
bidiretional connection