THYRISTOR MODULE
PK
(PD,PE,KK)
55HB
UL;E76102 M）
（
Power Thyristor/Diode Module
PK55HB
series are designed for various rectifier circuits
and power controls. For your circuit application. following internal connections and wide
voltage ratings up to 1,600V are available. and electrically isolated mounting base make
your mechanical design easy.
26MAX
3
93.5MAX
80
2
+
–
1
K2
G2
2- 6.5
●
I
T(AV)
55A, I
T(RMS)
86A, I
TSM
1100A
●
di/dt
13
150 A/μs
●
dv/dt 500V/μs
（Applications）
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
Static switches
Internal Configurations
K2
G2
3
2
16.5
23
23
K1
G1
~
3-M5
A1K2
（K2）
3
2
PK
K2
3
2
2
PE
K2
G2
K1
（A2） G1
1
A1K2
（K2）
K1
（A2） G1
1
1
（A1）
21
A1K2
（K2）
K1
（A2）
1
30MAX
K1
（A2） G1
1
K2
G2
110TAB
PD
KK
Unit：
A
■Maximum
Ratings
Symbol
V
RRM
V
RSM
V
DRM
Symbol
Item
＊Repetitive
Peak Reverse Voltage
＊Non-Repetitive
Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Item
Ratings
PK55HB120 PD55HB120
PK55HB160 PD55HB160
KK55HB120 PE55HB120
KK55HB160 PE55HB160
1200
1600
1350
1200
Conditions
Single phase, half wave, 180°
conduction, Tc：85℃
Single phase, half wave, 180°
conduction, Tc：85℃
1
cycle,
／
2
Unit
V
V
V
1700
1600
Ratings
55
86
1000
/
1100
5000
10
3
3
10
5
Unit
A
A
A
A
2
S
W
W
A
V
V
A
/
μs
V
℃
℃
N�½��½�
（㎏f�½�B）
g
（
I
T AV）
＊Average
On-State Current
（
I
T RMS）
＊R.M.S.
On-State Current
I
TSM
I
2
t
P
GM
（AV）
P
G
＊Surge
On-State Current
＊I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage (Forward)
Peak Gate Voltage (Reverse)
Critical Rate of Rise of On-State Current
＊Isolation
Breakdown Voltage (R.M.S.)
＊Operating
Junction Temperature
＊Storage
Temperature
Mounting
Torque
Mass
Mounting
（M6）
Terminal（M5）
50Hz/60Hz, peak Value, non-repetitive
Value for one cycle of surge current
I
FGM
V
FGM
V
RGM
di／dt
V
ISO
Tj
Tstg
I
G
＝100mA，
Tj＝25℃，
D
＝
1 2
V
DRM
，
G
/dt＝0.1A/μs
V
／
dI
A.C.1minute
150
2500
−40 to ＋125
−40 to ＋125
Recommended Value 2.5-3.9（25-40）
Recommended Value 1.5-2.5（15-25）
4.7（48）
2.7（28）
170
■Electrical
Characteristics
Symbol
I
DRM
I
RRM
V
TM
I
GT
／V
GT
V
GD
tgt
dv／dt
I
H
I
L
Item
Repetitive Peak Off-State Current, max.
＊Repetitive
Peak Reverse Current, max.
＊Peak
On-State Voltage, max.
Gate Trigger Current/Voltage, max.
Non-Trigger Gate, Voltage. min.
Turn On Time, max.
Critical Rate of Rise of Off-State Voltage, min.
Holding Current, typ.
Lutching Current, typ.
Conditions
at V
DRM
, single phase, half wave, Tj＝125℃
at V
DRM
, single phase, half wave, Tj＝125℃
On-State Current 165A, Tj＝125℃ Inst. measurement
Tj＝25℃，I
T
＝1A，V
D
＝6V
Tj＝125℃，V
D
＝
1 2
V
DRM
／
I
T
＝55A，
G
＝100mA，
I
Tj＝25℃，
D
＝
1 2
V
DRM
，
G
/
dt＝0.1A
/
V
／
dI
μs
Tj＝125℃, V
D
＝
2 3
V
DRM
, Exponential wave.
／
Tj＝25℃
Tj＝25℃
Junction to case
Ratings
10
10
1.50
100
/
2
0.25
10
500
50
100
0.50
Unit
mA
mA
V
mA
/
V
V
μs
V
/
μs
mA
mA
℃
/
W
Rth j-c）＊Thermal Impedance, max.
（
＊mark：Thyristor
and Diode part. No mark：Thyristor part
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