THYRISTOR MODULE
PK
(PD,PE)
110FG
UL;E76102 M）
（
Power Thyristor/Diode Module
PK110FG
series are designed for various rectifier
circuits and power controls. For your circuit application, following internal connections
and wide voltage ratings up to 1600V are available. and electrically isolated mounting
base make your mechanical design easy.
２φ6．
- ０
２．
５０
１．
２０
92．
０
2 ． 2 ． 2 ．
００ ００ ００
１．
７５
３． ７． 3．
5 ５ 5
６５
．
MAX ２ ．
９０
K２G２
●
I
T(AV)
110A, I
T(RMS)
172A, I
TSM
●
di/dt
●
dv/dt
3000A
Internal Configurations
K2
G2
3
2
100A/
μs
1000V/
μs
M ×1
５ ０
K2
G2
A1K2
（K2）
K1
（A2）
（Applications）
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
Static switches
１０
３±
．
０
０．
５
A1K2
（K2）
K1
（A2） G1
1
3
2
1
１．
９５
４０
．
２８ 4-＃ １ TAB
．
１０
NAME PLATE
PK
K2
3
2
PE
８ ．± ．
００ ０２
1
A1K2
（K2）
K1
（A2） G1
K G
PD
Unit：
A
■Maximum
Ratings
Ratings
Symbol
Item
PK110FG40
PD110FG40
PE110FG40
400
480
400
PK110FG80
PD110FG80
PE110FG80
800
960
800
Conditions
（Tj＝25℃
unless otherwise specified）
PK110FG120
PD110FG120
PE110FG120
1200
1300
1200
PK110FG160
PD110FG160
PE110FG160
1600
1700
1600
Ratings
110
172
2740/3000
37500
10
1
3
10
5
I
G
＝100mA，
D
＝
1 2
V
DRM
，
G
/dt＝0.1A/
V
／
di
μs
A.C. 1minute
100
2500
−40 to ＋125
−40 to ＋125
2.7（28）
2.7（28）
170
Ratings
V
RRM
V
RSM
V
DRM
Symbol
＊Repetitive
Peak Reverse Voltage
＊Non-Repetitive
Peak Reverse Voltage
＊Repetitive
Peak off-state Voltage
Item
V
V
V
Unit
A
A
A
A
2
S
W
W
A
V
V
A/
μs
V
℃
℃
N�½�m
（㎏f�½�B）
g
（
I
T AV）
＊Average
On-state Current
（
I
T RMS）
＊R.M.S.
On-state Current
Single phase, half wave, 180°
conduction, Tc＝81℃
Single phase, half wave, 180°
conduction, Tc＝81℃
1
／
2
I
TSM
I
2
t
P
GM
（AV）
P
G
＊Surge
On-state Current
＊I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage (Forward)
Peak Gate Voltage (Reverse)
Critical Rate of Rise of On-state Current
＊Isolation
Breakdown Voltage
（R.M.S.）
＊Operating
Junction Temperature
＊Storage
Temperature
Mounting
Torque
Mass
Cycle, 50/60H
Z
, Peak Value, non-repetitive
Value for one cycle surge current
I
FGM
V
FGM
V
RGM
di/dt
V
ISO
Tj
Tstg
Mounting
（M5）
Recommended Value 1.5-2.5（15-25）
Terminal M5） Recommended Value 1.5-2.5（15-25）
（
Typical Value
■Electrical
Characteristics
Symbol
I
DRM
I
RRM
V
TM
I
GT
V
GT
V
GD
dv/dt
Item
Repetitive Peak off-state Current,max
＊Repetitive
Peak Reverse Current,max
＊On-state
Voltage,max
Gate Trigger Current,max
Gate Trigger Voltage,max
Gate Non-Trigger Voltage,min
Critical Rate of Rise of off-state Voltage,min
Conditions
Tj＝125℃，V
D
＝V
DRM
Tj＝125℃，V
D
＝V
DRM
I
T
＝330A
V
D
＝6V，I
T
＝1A
V
D
＝6V，I
T
＝1A
Tj＝125℃，V
D
＝
1 2
V
DRM
／
Tj＝125℃，V
D
＝
2 3
V
DRM
／
Junction to case
Ratings
30
30
1.6
50
3
0.25
1000
0.25
Unit
mA
mA
V
mA
V
V
V/
μs
℃/W
Rth j-c）＊Thermal Impedance,max
（
＊mark：Thyristor
and Diode part. No mark：Thyristor part
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