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PD130F160 参数 Datasheet PDF下载

PD130F160图片预览
型号: PD130F160
PDF下载: 下载PDF文件 查看货源
内容描述: 晶闸管模块 [THYRISTOR MODULE]
分类和应用: 栅极触发装置可控硅整流器
文件页数/大小: 2 页 / 118 K
品牌: SANREX [ SANREX CORPORATION ]
 浏览型号PD130F160的Datasheet PDF文件第2页  
THYRISTOR MODULE
PK
(PD,PE,KK)
130F
UL:E76102 M)
Power Thyristor/Diode Module
PK130F
series are designed for various rectifier circuits
and power controls. For your circuit application. following internal connections and wide
voltage ratings up to 1,600V are available. Two elements in a package and electrically
isolated mounting base make your mechanical design easy.
I
T(AV)
130A, I
T(RMS)
205A, I
TSM
4400A
di/dt
dv/dt
60
48
24
92
12
26
26
7
4- (M5)
φ6
5 12 5
K1G1 K2G2
18
K2
G2
3
2
1
200 A/μs
500V/μs
K2
G2
3
2
2
M8×14
R8.0
♯110TAB
(2.8.0.5T)
(Applications)
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
Static switches
A1K2
(K2)
K1
(A2) G1
A1K2
(K2)
K1
(A2)
1
42max
34max
PK
K2
3
2
2
PE
K2
G2
K1
(A2) G1
1
5 2
80±0.3
A1K2
(K2)
K1
(A2) G1
1
1
(A1)
PD
KK
■Maximum
Ratings
Ratings
Symbol
Item
PK130F40
PD130F40
PE130F40
KK130F40
400
480
400
PK130F80
PD130F80
PE130F80
KK130F80
800
960
800
PK130F120
PD130F120
PE130F120
KK130F120
1200
1300
1200
PK130F160
PD130F160
PE130F160
KK130F160
1600
1700
1600
Ratings
130
205
4000
/
4400
8×10
4
10
3
3
10
5
200
2500
−40
to
+125
−40
to
+125
2.7(28)
11(115)
510
Unit
V
RRM
V
RSM
V
DRM
Symbol
I
T AV)
I
T RMS)
I
TSM
I
2
t
P
GM
(AV)
P
G
I
FGM
V
FGM
V
RGM
di/dt
V
ISO
Tj
Tstg
*Repetitive
Peak Reverse Voltage
*Non-Repetitive
Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Item
*Average
On-State Current
*R.M.S.
On-State Current
*Surge
On-State Current
*I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage (Forward)
Peak Gate Voltage (Reverse)
Critical Rate of Rise of On-State Current
*Isolation
Breakdown Voltage (R.M.S.)
*Operating
Junction Temperature
*Storage
Temperature
Mounting
(M5)
Mounting
Torque
Terminal(M8)
Mass
33
Unit:
A
V
V
V
Unit
A
A
A
A
2
S
W
W
A
V
V
A
/
μs
V
N�½��½�
(㎏f�½�B)
g
Conditions
Single phase, half wave, 180°
conduction, Tc:90℃
Single phase, half wave, 180°
conduction, Tc:90℃
1
cycle, 50Hz/60Hz, peak Value, non-repetitive
2
Value for one cycle of surge current
I
G
=100mA,
Tj=25℃,
D
1 2
V
DRM
G
/
dt=0.1A
/
V
dI
μs
A.C.1minute
Recommended 1.5-2.5(15-25)
Recommended 8.8-10(90-105)
■Electrical
Characteristics
Symbol
Item
I
DRM
Repetitive Peak Off-State Current, max.
I
RRM
*Repetitive
Peak Reverse Current, max.
V
TM
*Peak
On-State Voltage, max.
I
GT
/V
GT
Gate Trigger Current/Voltage, max.
V
GD
Non-Trigger Gate, Voltage. min.
tgt
Turn On Time, max.
Critical Rate of Rise of Off-State Voltage, min.
dv/dt
I
H
Holding Current, typ.
I
L
Lutching Current, typ.
Rth j-c)*Thermal Impedance, max.
*mark:Thyristor
and Diode part. No mark:Thyristor part
Conditions
at V
DRM
, single phase, half wave, Tj=125℃
at V
DRM
, single phase, half wave, Tj=125℃
On-State Current 400A, Tj=25℃ Inst. measurement
Tj=25℃,I
T
=1A,V
D
=6V
Tj=125℃,V
D
1 2
V
DRM
I
T
=130A,
G
=100mA,
I
Tj=25℃,
D
1 2
V
DRM
G
/
dt=0.1A
/
μs
V
dI
2
V
DRM
, Exponential wave.
Tj=125℃, V
D
= /
3
Tj=25℃
Tj=25℃
Junction to case
Ratings
50
50
1.40
100
/
3
0.25
10
500
50
100
0.2
Unit
mA
mA
V
mA
/
V
V
μs
V
/
μs
mA
mA
/
W
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com