THYRISTOR MODULE
PK
(PD,PE,KK)
160F
UL:E76102 M）
（
Power Thyristor/Diode Module
PK160F
series are designed for various rectifier circuits
and power controls. For your circuit application. following internal connections and wide
voltage ratings up to 1,600V are available. Two elements in a package and electrically
isolated mounting base make your mechanical design easy.
60
48
24
92
12
26
26
7
4- （M5）
φ6
5 12 5
K1G1 K2G2
18
2
M8×14
♯110TAB
（2.8.0.5T）
42max
34max
R8.0
5 2
80±0.3
●
I
T(AV)
160A, I
T(RMS)
250A, I
TSM
5500A
●
di/dt
●
dv/dt
200 A/μs
500V/μs
K2
G2
3
2
（Applications）
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
Static switches
A1K2
（K2）
K1
（A2） G1
1
K2
G2
3
2
A1K2
（K2）
K1
（A2）
1
PK
K2
3
2
2
PE
K2
G2
K1
（A2） G1
1
A1K2
（K2）
K1
（A2） G1
1
1
（A1）
PD
KK
■Maximum
Ratings
Ratings
Symbol
Item
PK160F40
PD160F40
PE160F40
KK160F40
400
480
400
PK160F80
PD160F80
PE160F80
KK160F80
800
960
800
PK160F120
PD160F120
PE160F120
KK160F120
1200
1300
1200
PK160F160
PD160F160
PE160F160
KK160F160
1600
1700
1600
Ratings
160
250
5000
/
5500
1.25×10
5
10
3
3
10
5
200
2500
−40
to
＋125
−40
to
＋125
2.7（28）
11（115）
510
Unit
V
RRM
V
RSM
V
DRM
Symbol
I
T(AV)
, I
F(AV)
I
T(RMS)
, I
F(RMS)
I
TSM
, I
FSM
I
2
t
P
GM
（AV）
P
G
I
FGM
V
FGM
V
RGM
di／dt
V
ISO
Tj
Tstg
＊Repetitive
Peak Reverse Voltage
＊Non-Repetitive
Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Item
＊Average
On-State Current
＊R.M.S.
On-State Current
＊Surge
On-State Current
＊I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage (Forward)
Peak Gate Voltage (Reverse)
Critical Rate of Rise of On-State Current
＊Isolation
Breakdown Voltage (R.M.S.)
＊Operating
Junction Temperature
＊Storage
Temperature
Mounting
（M5）
Mounting
Torque
Terminal（M8）
Mass
33
Unit：
A
V
V
V
Unit
A
A
A
A
2
S
W
W
A
V
V
A
/
μs
V
℃
℃
N�½��½�
（㎏f�½�B）
g
Conditions
Single phase, half wave, 180°
conduction, Tc：87℃
Single phase, half wave, 180°
conduction, Tc：87℃
1
cycle, 50Hz/60Hz, peak Value, non-repetitive
／
2
Value for one cycle of surge current
I
G
＝100mA，
Tj＝25℃，
D
＝
1 2
V
DRM
，
G
/
dt＝0.1A
/
V
／
dI
μs
A.C.1minute
Recommended 1.5-2.5（15-25）
Recommended 8.8-10
（90-105）
■Electrical
Characteristics
Symbol
Item
I
DRM
Repetitive Peak Off-State Current, max.
I
RRM
＊Repetitive
Peak Reverse Current, max.
V
TM
＊Peak
On-State Voltage, max.
I
GT
／V
GT
Gate Trigger Current/Voltage, max.
V
GD
Non-Trigger Gate, Voltage. min.
tgt
Turn On Time, max.
Critical Rate of Rise of Off-State Voltage, min.
dv／dt
I
H
Holding Current, typ.
I
L
Lutching Current, typ.
Rth j-c）
＊Thermal
Impedance, max.
（
＊mark：Thyristor
and Diode part. No mark：Thyristor part
Conditions
at V
DRM
, single phase, half wave, Tj＝125℃
at V
DRM
, single phase, half wave, Tj＝125℃
On-State Current 500A, Tj＝25℃ Inst. measurement
Tj＝25℃，I
T
＝1A，V
D
＝6V
Tj＝125℃，V
D
＝
1 2
V
DRM
／
I
T
＝160A，
G
＝100mA，
I
Tj＝25℃，
D
＝
1 2
V
DRM
，
G
/
dt＝0.1A
/
V
／
dI
μs
Tj＝125℃, V
D
＝
2 3
V
DRM
, Exponential wave.
／
Tj＝25℃
Tj＝25℃
Junction to case
Ratings
50
50
1.42
100
/
3
0.25
10
500
50
100
0.18
Unit
mA
mA
V
mA
/
V
V
μs
V
/
μs
mA
mA
℃
/
W
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SANREX [ SANREX CORPORATION ]
