THYRISTOR MODULE
PK
(PD,PE)
200HB
UL;E76102 M）
（
Power Thyristor/Diode Module
PK200HB
series are designed for various rectifier
circuits and power controls. For your circuit application. following internal connections
and wide voltage ratings up to 1,600V are available.
Isolated mounting base
●
I
T AV）
200A, I
T RMS）
310A, I
TSM
5500A
（
（
●
di/dt 200 A/μs
●
dv/dt 500V/μs
（Applications）
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
Static switches
Internal Configurations
92
12
26
26
7
4- （M5）
φ6
5 12 5
K1G1 K2G2
18
2
M8×14
♯110TAB
（2.8.0.5T）
K2
G2
3
2
60
48
24
R8.0
5 2
80±0.3
A1K2
（K2）
K1
（A2） G1
1
3
2
A1K2
（K2）
K1
（A2） G1
1
3
2
A1K2
（K2）
K1
（A2）
1
PK
PD
PE
■Maximum
Ratings
Symbol
V
RRM
V
RSM
V
DRM
Symbol
Item
＊Repetitive
Peak Reverse Voltage
＊Non-Repetitive
Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Item
PK200HB120
PE200HB120
Ratings
PD200HB120
PK200HB160
PE200HB160
PD200HB160
Unit
V
V
V
Ratings
200
310
5000/5500
125000
10
3
3
10
5
I
G
＝100mA，
Tj＝25℃，
D
＝
1 2
V
DRM
，
G
/dt＝0.1A/
V
／
dI
μs
A.C. 1 minute
200
2500
−40 to ＋125
−40 to ＋125
2.7（28）
11（115）
510
Recommended Value 8.8-10
（90-105）
Typical Value
Unit
A
A
A
A
2
S
W
W
A
V
V
A/
μs
V
℃
℃
N�½��½�
（㎏f�½�B）
g
1200
1300
1200
Conditions
Single phase, half wave, 180°
conduction, Tc：74℃
Single phase, half wave, 180°
conduction, Tc：74℃
1
cycle,
／
2
1600
1700
1600
（
I
T AV）
＊Average
On-State Current
（
I
T RMS）
＊R.M.S.
On-State Current
I
TSM
I
2
t
P
GM
（AV）
P
G
＊Surge
On-State Current
＊I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage（Forward）
Peak Gate Voltage（Reverse）
Critical Rate of Rise of On-State Current
＊Isolation
Breakdown Voltage（R.M.S.）
＊Operating
Junction Temperature
＊Storage
Temperature
Mounting
Torque
Mass
50Hz/60Hz, peak Value, non-reqetitive
Value for one cycle of surge current
I
FGM
V
FGM
V
RGM
di/dt
V
ISO
Tj
Tstg
Mounting（M5） Recommended Value 1.5-2.5（15-25）
Terminal（M8）
■Electrical
Characteristics
Symbol
I
DRM
I
RRM
V
TM
I
GT
/V
GT
V
GD
tgt
dv/dt
I
H
I
L
Item
Repetitive Peak Off-State Current, max.
＊Repetitive
Peak Reverse Current, max.
＊Peak
On-State Voltage, max.
Gate Trigger Current/Voltage, max.
Non-Trigger Gate, Voltage. min.
Turn On Time, max.
Critical Rate of Rise of Off-State Voltage, min.
Holding Current, typ.
Lutching Current, typ.
Conditions
at V
DRM
, Single phase, half wave, Tj＝125℃
at V
DRM
, Single phase, half wave, Tj＝125℃
On-State Current 750A, Tj＝125℃ Inst. measurement
Tj＝25℃，I
T
＝1A，V
D
＝6V
Tj＝125℃，V
D
＝
1 2
V
DRM
／
I
T
＝250A，
G
＝100mA，
I
Tj＝25℃，
D
＝
1 2
V
DRM
，
G
/dt＝0.1A/μs
V
／
dI
Tj＝125℃，V
D
＝
2 3
V
DRM
，Exponential
wave.
／
Tj＝25℃
Tj＝25℃
Junction to case
Ratings
50
50
1.50
100/3
0.25
10
500
50
100
0.18
Unit
mA
mA
V
mA/V
V
μs
V/
μs
mA
mA
℃/W
Rth j-c）
＊Thermal
Impedance, max.
（
＊mark：Thyristor
and Diode part. No mark：Thyristor part
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
33
K2
K2
G2
42max
34max
Unit：A
SANREX [ SANREX CORPORATION ]
