THYRISTOR MODULE
PK
(PD,PE,KK)
40F
UL:E76102 M）
（
Power Thyristor/Diode Module
PK40F
series are designed for various rectifier circuits
and power controls. For your circuit application. following internal connections and wide
voltage ratings up to 1,600V are available. High precision 25mm (1inch) width package
and electrically isolated mounting base make your mechanical design easy.
●
I
T(AV)
40A, I
T(RMS)
62A, I
TSM
1300A
●
di/dt
●
dv/dt
25
12.5
12
K
1
G
1
K
2
G
2
150 A/μs
500V/μs
K2
G2
3
2
M5X10
K2
G2
3
2
1
2.8
#110TAB
（Applications）
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
Static switches
A1K2
（K2）
K1
（A2） G1
1
PK
K2
3
2
2
PE
K2
G2
K1
（A2） G1
1
31max
19.5
80±0.2
A1K2
（K2）
K1
（A2） G1
1
1
（A1）
PD
KK
■Maximum
Ratings
Ratings
Symbol
Item
PK40F40
PD40F40
PE40F40
KK40F40
400
480
400
PK40F80
PD40F80
PE40F80
KK40F80
800
960
800
PK40F120
PD40F120
PE40F120
KK40F120
1200
1300
1200
PK40F160
PD40F160
PE40F160
KK40F160
1600
1700
1600
Ratings
40
62
1200
/
1300
7200
10
3
3
10
5
150
2500
−40 to ＋125
−40 to ＋125
2.7（28）
2.7（28）
170
Unit
V
RRM
V
RSM
V
DRM
Symbol
（
I
T AV）
（
I
T RMS）
I
TSM
I
2
t
P
GM
（AV）
P
G
I
FGM
V
FGM
V
RGM
di／dt
V
ISO
Tj
Tstg
＊Repetitive
Peak Reverse Voltage
＊Non-Repetitive
Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Item
＊Average
On-State Current
＊R.M.S.
On-State Current
＊Surge
On-State Current
＊I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage (Forward)
Peak Gate Voltage (Reverse)
Critical Rate of Rise of On-State Current
＊Isolation
Breakdown Voltage (R.M.S.)
＊Operating
Junction Temperature
＊Storage
Temperature
Mounting
（M5）
Mounting
Torque
Terminal（M5）
Mass
6.5
29max
A1K2
（K2）
K1
（A2）
Unit：
A
3.5
7.5 3.5
2- 6
20
20
92
20
17.5
V
V
V
Unit
A
A
A
A
2
S
W
W
A
V
V
A
/
μs
V
℃
℃
N�½��½�
（㎏f�½�B）
g
Conditions
Single phase, half wave, 180°
conduction, Tc：96℃
Single phase, half wave, 180°
conduction, Tc：96℃
1
cycle, 50Hz/60Hz, peak Value, non-repetitive
／
2
Value for one cycle of surge current
I
G
＝100mA，
Tj＝25℃，
D
＝
1 2
V
DRM
，
G
/
dt＝0.1A
/
V
／
dI
μs
A.C.1minute
Recommended Value 1.5-2.5（15-25）
Recommended Value 1.5-2.5（15-25）
■Electrical
Characteristics
Symbol
Item
I
DRM
Repetitive Peak Off-State Current, max.
I
RRM
＊Repetitive
Peak Reverse Current, max.
V
TM
＊Peak
On-State Voltage, max.
I
GT
／V
GT
Gate Trigger Current/Voltage, max.
V
GD
Non-Trigger Gate, Voltage. min.
tgt
Turn On Time, max.
Critical Rate of Rise of Off-State Voltage, min.
dv／dt
I
H
Holding Current, typ.
I
L
Lutching Current, typ.
Rth j-c）＊Thermal Impedance, max.
（
＊mark：Thyristor
and Diode part. No mark：Thyristor part
Conditions
at V
DRM
, single phase, half wave, Tj＝125℃
at V
DRM
, single phase, half wave, Tj＝125℃
On-State Current 120A, Tj＝25℃ Inst. measurement
Tj＝25℃，I
T
＝1A，V
D
＝6V
Tj＝125℃，V
D
＝
1 2
V
DRM
／
I
T
＝40A，
G
＝100mA，
I
Tj＝25℃，
D
＝
1 2
V
DRM
，
G
/
dt＝0.1A
/
V
／
dI
μs
2
V
DRM
, Exponential wave.
Tj＝125℃, V
D
＝ ／
3
Tj＝25℃
Tj＝25℃
Junction to case
Ratings
15
15
1.40
70
/
3
0.25
10
500
50
100
0.55
Unit
mA
mA
V
mA
/
V
V
μs
V
/
μs
mA
mA
℃
/
W
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
SANREX [ SANREX CORPORATION ]
