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PE40FG40 参数 Datasheet PDF下载

PE40FG40图片预览
型号: PE40FG40
PDF下载: 下载PDF文件 查看货源
内容描述: 晶闸管模块 [THYRISTOR MODULE]
分类和应用:
文件页数/大小: 2 页 / 99 K
品牌: SANREX [ SANREX CORPORATION ]
 浏览型号PE40FG40的Datasheet PDF文件第2页  
THYRISTOR MODULE
PK
(PD,PE)
40FG
UL;E76102 M)
Power Thyristor/Diode Module
PK40FG
series are designed for various rectifier circuits
and power controls. For your circuit application, following internal connections and wide
voltage ratings up to 1600V are available. and electrically isolated mounting base make
your mechanical design easy.
2φ6.
- 0
2.
50
1.
20
92.
2 . 2 . 2 .
00 00 00
1.
75
3. 7. 3.
5 5 5
65
MAX 2 .
90
K2G2
I
T(AV)
40A, I
T(RMS)
62A, I
TSM
di/dt
dv/dt
950A
Internal Configurations
K2
G2
3
2
100A/
μs
1000V/
μs
M ×1
5 0
K2
G2
A1K2
(K2)
K1
(A2)
(Applications)
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
Static switches
10
3±
0.
A1K2
(K2)
K1
(A2) G1
1
3
2
1
1.
95
40
28 4-# 1 TAB
10
NAME PLATE
PK
K2
3
2
PE
8 .± .
00 02
1
A1K2
(K2)
K1
(A2) G1
K G
PD
Unit:
A
■Maximum
Ratings
Ratings
Symbol
Item
PK40FG40
PD40FG40
PE40FG40
400
480
400
PK40FG80
PD40FG80
PE40FG80
800
960
800
Conditions
(Tj=25℃
unless otherwise specified)
PK40FG120
PD40FG120
PE40FG120
1200
1300
1200
PK40FG160
PD40FG160
PE40FG160
1600
1700
1600
Ratings
40
62
870/950
3760
10
1
3
10
5
I
G
=100mA,
D
1 2
V
DRM
G
/dt=0.1A/
V
di
μs
A.C. 1minute
100
2500
−40 to +125
−40 to +125
2.7(28)
2.7(28)
170
Unit
V
RRM
V
RSM
V
DRM
Symbol
*Repetitive
Peak Reverse Voltage
*Non-Repetitive
Peak Reverse Voltage
*Repetitive
Peak off-state Voltage
Item
V
V
V
Unit
A
A
A
A
2
S
W
W
A
V
V
A/
μs
V
N�½�m
(㎏f�½�B)
g
I
T AV)
*Average
On-state Current
I
T RMS)
*R.M.S.
On-state Current
Single phase, half wave, 180°
conduction, Tc=83℃
Single phase, half wave, 180°
conduction, Tc=83℃
1
2
I
TSM
I
2
t
P
GM
(AV)
P
G
*Surge
On-state Current
*I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage (Forward)
Peak Gate Voltage (Reverse)
Critical Rate of Rise of On-state Current
*Isolation
Breakdown Voltage
(R.M.S.)
*Operating
Junction Temperature
*Storage
Temperature
Mounting
Torque
Mass
Cycle, 50/60H
Z
, Peak Value, non-repetitive
Value for one cycle surge current
I
FGM
V
FGM
V
RGM
di/dt
V
ISO
Tj
Tstg
Mounting
(M5)
Recommended Value 1.5-2.5(15-25)
Terminal M5) Recommended Value 1.5-2.5(15-25)
Typical Value
■Electrical
Characteristics
Symbol
I
DRM
I
RRM
V
TM
I
GT
V
GT
V
GD
dv/dt
Item
Repetitive Peak off-state Current,max
*Repetitive
Peak Reverse Current,max
*On-state
Voltage,max
Gate Trigger Current,max
Gate Trigger Voltage,max
Gate Non-Trigger Voltage,min
Critical Rate of Rise of off-state Voltage,min
Conditions
Tj=125℃,V
D
=V
DRM
Tj=125℃,V
D
=V
DRM
I
T
=120A
V
D
=6V,I
T
=1A
V
D
=6V,I
T
=1A
Tj=125℃,V
D
1 2
V
DRM
Tj=125℃,V
D
2 3
V
DRM
Junction to case
Ratings
10
10
1.6
50
3
0.25
1000
0.65
Unit
mA
mA
V
mA
V
V
V/
μs
℃/W
Rth j-c)*Thermal Impedance,max
*mark:Thyristor
and Diode part. No mark:Thyristor part
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com