THYRISTOR MODULE
PK
(PD,PE)
200GB
UL;E76102 M）
（
Power Thyristor/Diode Module
PK200GB
series are designed for various rectifier
circuits and power controls. For your circuit application. following internal connections
and wide voltage ratings up to 800V are available.
Isolated mounting base
●
di/dt
●
I
T AV）
200A, I
T RMS）
310A, I
TSM
5500A
（
（
●
dv/dt
92
12
26
26
7
4- （M5）
φ6
5 12 5
K1G1 K2G2
18
2
M8×14
♯110TAB
（2.8.0.5T）
K2
G2
3
2
200 A/μs
500V/μs
Internal Configurations
K2
G2
3
2
60
48
24
（Applications）
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
Static switches
R8.0
5 2
80±0.3
A1K2
（K2）
K1
（A2） G1
1
3
2
A1K2
（K2）
K1
（A2） G1
1
A1K2
（K2）
K1
（A2）
1
PK
PD
PE
■Maximum
Ratings
Ratings
Symbol
V
RRM
V
RSM
V
DRM
Symbol
Item
＊Repetitive
Peak Reverse Voltage
＊Non-Repetitive
Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Item
PK200GB40
PE200GB40
PD200GB40
PK200GB80
PE200GB80
PD200GB80
Unit
V
V
V
Ratings
200
310
5000/5500
125000
10
3
3
10
5
I
G
＝100mA，
Tj＝25℃，
D
＝
1 2
V
DRM
，
G
/dt＝0.1A/
V
／
dI
μs
A.C. 1 minute
200
2500
−40 to ＋125
−40 to ＋125
2.7（28）
11（115）
510
Recommended Value 8.8-10
（90-105）
Typical Value
Unit
A
A
A
A
2
S
W
W
A
V
V
A/
μs
V
℃
℃
N�½��½�
（㎏f�½�B）
g
400
480
400
Conditions
Single phase, half wave, 180°
conduction, Tc：74℃
Single phase, half wave, 180°
conduction, Tc：74℃
1
cycle,
／
2
800
960
800
（
I
T AV）
＊Average
On-State Current
（
I
T RMS）
＊R.M.S.
On-State Current
I
TSM
I
2
t
P
GM
（AV）
P
G
＊Surge
On-State Current
＊I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage（Forward）
Peak Gate Voltage（Reverse）
Critical Rate of Rise of On-State Current
＊Isolation
Breakdown Voltage（R.M.S.）
＊Operating
Junction Temperature
＊Storage
Temperature
Mounting
Torque
Mass
50Hz/60Hz, peak Value, non-reqetitive
Value for one cycle of surge current
I
FGM
V
FGM
V
RGM
di/dt
V
ISO
Tj
Tstg
Mounting（M5） Recommended Value 1.5-2.5（15-25）
Terminal（M8）
■Electrical
Characteristics
Symbol
I
DRM
I
RRM
V
TM
I
GT
/V
GT
V
GD
tgt
dv/dt
I
H
I
L
Item
Repetitive Peak Off-State Current, max.
＊Repetitive
Peak Reverse Current, max.
＊Peak
On-State Voltage, max.
Gate Trigger Current/Voltage, max.
Non-Trigger Gate, Voltage. min.
Turn On Time, max.
Critical Rate of Rise of Off-State Voltage, min.
Holding Current, typ.
Lutching Current, typ.
Conditions
at V
DRM
, Single phase, half wave, Tj＝125℃
at V
DRM
, Single phase, half wave, Tj＝125℃
On-State Current 600A, Tj＝125℃ Inst. measurement
Tj＝25℃，I
T
＝1A，V
D
＝6V
Tj＝125℃，V
D
＝
1 2
V
DRM
／
I
T
＝200A，
G
＝100mA，
I
Tj＝25℃, V
D
＝
1 2
V
DRM
，
G
/dt＝0.1A/μs
／
dI
Tj＝125℃, V
D
＝
2 3
V
DRM
, Exponential wave.
／
Tj＝25℃
Tj＝25℃
Junction to case
Ratings
50
50
1.50
100/3
0.25
10
500
50
100
0.18
Unit
mA
mA
V
mA/V
V
μs
V/
μs
mA
mA
℃/W
Rth j-c）＊Thermal Impedance, max.
（
＊mark：Thyristor
and Diode part. No mark：Thyristor part
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
33
K2
42max
34max
Unit：A
SANREX [ SANREX CORPORATION ]
