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PK25FG40 参数 Datasheet PDF下载

PK25FG40图片预览
型号: PK25FG40
PDF下载: 下载PDF文件 查看货源
内容描述: 晶闸管模块 [THYRISTOR MODULE]
分类和应用:
文件页数/大小: 2 页 / 98 K
品牌: SANREX [ SANREX CORPORATION ]
 浏览型号PK25FG40的Datasheet PDF文件第2页  
THYRISTOR MODULE
PK
(PD,PE)
25FG
UL;E76102 M)
Power Thyristor/Diode Module
PK25FG
series are designed for various rectifier circuits
and power controls. For your circuit application, following internal connections and wide
voltage ratings up to 1600V are available. and electrically isolated mounting base make
your mechanical design easy.
2φ6.
- 0
2.
50
1.
20
92.
2 . 2 . 2 .
00 00 00
1.
75
3. 7. 3.
5 5 5
65
MAX 2 .
90
K2G2
I
T(AV)
25A, I
T(RMS)
39A, I
TSM
700A
Internal Configurations
K2
G2
3
2
100A/
μs
1000V/
μs
(Applications)
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
Static switches
di/dt
dv/dt
M ×1
5 0
K2
G2
A1K2
(K2)
K1
(A2)
10
3±
0.
A1K2
(K2)
K1
(A2) G1
1
3
2
1
1.
95
40
28 4-# 1 TAB
10
NAME PLATE
PK
K2
3
2
PE
8 .± .
00 02
1
A1K2
(K2)
K1
(A2) G1
K G
PD
Unit:
A
■Maximum
Ratings
Ratings
Symbol
Item
PK25FG40
PD25FG40
PE25FG40
400
480
400
PK25FG80
PD25FG80
PE25FG80
800
960
800
Conditions
(Tj=25℃
unless otherwise specified)
PK25FG120
PD25FG120
PE25FG120
1200
1300
1200
PK25FG160
PD25FG160
PE25FG160
1600
1700
1600
Ratings
25
39
640/700
2870
10
1
3
10
5
I
G
=100mA,
D
1 2
V
DRM
G
/dt=0.1A/
V
di
μs
A.C. 1minute
100
2500
−40 to +125
−40 to +125
2.7(28)
2.7(28)
170
Unit
V
RRM
V
RSM
V
DRM
Symbol
*Repetitive
Peak Reverse Voltage
*Non-Repetitive
Peak Reverse Voltage
Repetitive Peak off-state Voltage
Item
V
V
V
Unit
A
A
A
A
2
S
W
W
A
V
V
A/
μs
V
N�½�m
(㎏f�½�B)
g
I
T AV)
*Average
On-state Current
I
T RMS)
*R.M.S.
On-state Current
Single phase, half wave, 180°
conduction, Tc=81℃
Single phase, half wave, 180°
conduction, Tc=81℃
1
2
I
TSM
I
2
t
P
GM
(AV)
P
G
*Surge
On-state Current
*I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage (Forward)
Peak Gate Voltage (Reverse)
Critical Rate of Rise of On-state Current
*Isolation
Breakdown Voltage
(R.M.S.)
*Operating
Junction Temperature
*Storage
Temperature
Mounting
Torque
Mass
Cycle, 50/60H
Z
, Peak Value, non-repetitive
Value for one cycle surge current
I
FGM
V
FGM
V
RGM
di/dt
V
ISO
Tj
Tstg
Mounting
(M5)
Recommended Value 1.5-2.5(15-25)
Terminal(M5) Recommended Value 1.5-2.5(15-25)
Typical Value
■Electrical
Characteristics
Symbol
I
DRM
I
RRM
V
TM
I
GT
V
GT
V
GD
dv/dt
Item
Repetitive Peak off-state Current,max
*Repetitive
Peak Reverse Current,max
*On-state
Voltage,max
Gate Trigger Current,max
Gate Trigger Voltage,max
Gate Non-Trigger Voltage,min
Critical Rate of Rise of off-state Voltage,min
Conditions
Tj=125℃,V
D
=V
DRM
Tj=125℃,V
D
=V
DRM
I
T
=75A
V
D
=6V,I
T
=1A
V
D
=6V,I
T
=1A
Tj=125℃,V
D
1 2
V
DRM
Tj=125℃,V
D
2 3
V
DRM
Junction to case
Ratings
5
5
1.6
50
3
0.25
1000
1.10
Unit
mA
mA
V
mA
V
V
V/
μs
℃/W
Rth j-c)*Thermal Impedance,max
*mark:Thyristor
and Diode part. No mark:Thyristor part
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com