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PK25HB160 参数 Datasheet PDF下载

PK25HB160图片预览
型号: PK25HB160
PDF下载: 下载PDF文件 查看货源
内容描述: 晶闸管模块 [THYRISTOR MODULE]
分类和应用:
文件页数/大小: 2 页 / 117 K
品牌: SANREX [ SANREX CORPORATION ]
 浏览型号PK25HB160的Datasheet PDF文件第1页  
Transient Thermal Impedance
θ
(℃/W)
j-c
Surge On-State Current
(A)
;;
PK(PD,PE,KK)25HB
Gate Characteristics
On-State Voltage max
On-State Current
(A)
Peak Forward Gate Voltage
(10V)
Gate Voltage
(V)
Ga
te
Peak Gate Current
(3A)
Av
er
ag
e
Pe
Po ak G
we a
( te
r
10
W
Tj=125℃
Po
we
r
1W
125℃
25℃ −30℃
Maximum Gate Voltage that will not trigger any unit
(0.25V)
−1
05
10
15
20
25
30
Gate Current
(mA)
On-State Voltage
(V)
Allowable Case Temperature
(℃)
Average On-State Current Vs Power Dissipation
(Single phase half wave)
Per one element
10
10
10
Average On-State Current Vs Maximum Allowable
Case Temperature
(Single phase half wave)
Per one element
2
Power Dissipation
(W)
D.C.
360
: Conduction Angle
θ
=180゜
θ
=120゜
θ
=90゜
θ
=60゜
θ
=30゜
2
360
θ
=30゜
=180゜
θ
=90゜ θ
=120゜
θ
=60゜ θ
D.C.
: Conduction Angle
Average On-State Current
(A)
Average On-State Current
(A)
60
50
40
Surge On-State Current Rating
(Non-Repetitive)
Per one element
T = 5 start
�½�2 ℃
Transient Thermal Impedance
5 1
Junction to case
09
06
Per one element
30
20
10
50Hz
60Hz
03
10
-3
5 1
-2
Time
(cycles)
Time
t
sec)
5 1
-1
5 1
Total Power Dissipation
(W)
Total Power Dissipation
(W)
Conduction Angle 180゜ W3
B6
Id Ar.m.s.)
20
B2
Rth:1.0℃/W
Rth:0.8℃/W
Rth:0.6℃/W
Rth:0.4℃/W
Rth:0.1℃/W
W1
20
Rth:1.0℃/W
Rth:0.8℃/W
Rth:0.6℃/W
Rth:0.4℃/W
Rth:0.1℃/W
Id Aav.)
Rth:1.0℃/W
Rth:0.1
℃/W
Id Aav.)
10
10
10
10
10
Rth:0.8℃/W
10
10
10
15
0 2 5 7 10 15
5 0 5 0 2
Id Ar.m.s.)
10
Rth:0.6℃/W
Rth:0.4℃/W
10
10
10
15
0 2 5 7 10 15
5 0 5 0 2
10
15
0 2 5 7 10 15
5 0 5 0 2
Output Current
(A)
Ambient Temperature
(℃)
Ambient Temperature
(℃) Ambient Temperature
(℃)
Allowable Case Temperature
(℃)
20
Allowable Case Temperature
(℃)
Output Current
W1 Bidirectional connection
20
B2
;Two Pluse bridge connection
B6 Six pulse bridge connection
W3 Three phase
bidiretional connection