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PK55GB 参数 Datasheet PDF下载

PK55GB图片预览
型号: PK55GB
PDF下载: 下载PDF文件 查看货源
内容描述: 晶闸管模块 [THYRISTOR MODULE]
分类和应用:
文件页数/大小: 2 页 / 119 K
品牌: SANREX [ SANREX CORPORATION ]
 浏览型号PK55GB的Datasheet PDF文件第2页  
THYRISTOR MODULE
PK
(PD,PE,KK)
55GB
UL;E76102 M)
Power Thyristor/Diode Module
PK55GB
series are designed for various rectifier circuits
and power controls. For your circuit application. following internal connections and wide
voltage ratings up to 800V are available. and electrically isolated mounting base make
your mechanical design easy.
26MAX
3
93.5MAX
80
2
+
1
K2
G2
2- 6.5
di/dt
150 A/μs
dv/dt 500V/μs
(Applications)
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
Static switches
Internal Configurations
K2
G2
3
2
16.5
23
23
K1
G1
I
T(AV)
55A, I
T(RMS)
86A, I
TSM
1100A
13
~
3-M5
A1K2
(K2)
K1
(A2)
30MAX
A1K2
(K2)
K1
(A2) G1
1
K2
G2
3
2
1
110TAB
PK
K2
3
2
2
PE
K2
G2
K1
(A2) G1
1
A1K2
(K2)
K1
(A2) G1
1
1
(A1)
21
PD
KK
Unit:
A
■Maximum
Ratings
Ratings
Symbol
V
RRM
V
RSM
V
DRM
Symbol
Item
*Repetitive
Peak Reverse Voltage
*Non-Repetitive
Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Item
PK55GB40 PD55GB40
KK55GB40 PE55GB40
400
480
400
Conditions
Single phase, half wave, 180°
conduction, Tc:89℃
Single phase, half wave, 180°
conduction, Tc:89℃
1
cycle,
2
PK55GB80 PD55GB80
KK55GB80 PE55GB80
800
960
800
Ratings
55
86
1000/1100
5000
10
3
3
10
5
Unit
V
V
V
Unit
A
A
A
A
2
S
W
W
A
V
V
A/
μs
V
N�½��½�
(㎏f�½�B)
g
I
T AV)
*Average
On-State Current
I
T RMS)
*R.M.S.
On-State Current
I
TSM
I
2
t
P
GM
(AV)
P
G
*Surge
On-State Current
*I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage (Forward)
Peak Gate Voltage (Reverse)
Critical Rate of Rise of On-State Current
*Isolation
Breakdown Voltage (R.M.S.)
*Operating
Junction Temperature
*Storage
Temperature
Mounting
Torque
Mass
Mounting
(M6)
Terminal(M5)
50Hz/60Hz, peak Value, non-repetitive
Value for one cycle of surge current
I
FGM
V
FGM
V
RGM
di/dt
V
ISO
Tj
Tstg
I
G
=100mA,
Tj=25℃,
D
1 2
V
DRM
G
/dt=0.1A
/
V
dI
μs
A.C.1minute
150
2500
−40 to +125
−40 to +125
Recommended Value 2.5-3.9(25-40)
Recommended Value 1.5-2.5(15-25)
4.7(48)
2.7(28)
170
■Electrical
Characteristics
Symbol
I
DRM
I
RRM
V
TM
I
GT
/V
GT
V
GD
tgt
dv/dt
I
H
I
L
Item
Repetitive Peak Off-State Current, max.
*Repetitive
Peak Reverse Current, max.
*Peak
On-State Voltage, max.
Gate Trigger Current/Voltage, max.
Non-Trigger Gate, Voltage. min.
Turn On Time, max.
Critical Rate of Rise of Off-State Voltage, min.
Holding Current, typ.
Lutching Current, typ.
Conditions
at V
DRM
, single phase, half wave, Tj=125℃
at V
DRM
, single phase, half wave, Tj=125℃
On-State Current 165A, Tj=125℃ Inst. measurement
Tj=25℃,I
T
=1A,V
D
=6V
Tj=125℃,V
D
1 2
V
DRM
I
T
=55A,
G
=100mA,
I
Tj=25℃,
D
1 2
V
DRM
G
/
dt=0.1A
/
V
dI
μs
Tj=125℃, V
D
2 3
V
DRM
, Exponential wave.
Tj=25℃
Tj=25℃
Junction to case
Ratings
10
10
1.35
100
/
3
0.25
10
500
50
100
0.50
Unit
mA
mA
V
mA
/
V
V
μs
V/
μs
mA
mA
/
W
Rth j-c)*Thermal Impedance, max.
*mark:Thyristor
and Diode part. No mark:Thyristor part
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com