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PK90GB 参数 Datasheet PDF下载

PK90GB图片预览
型号: PK90GB
PDF下载: 下载PDF文件 查看货源
内容描述: 专为各种整流电路和电源控制 [Designed for various rectifier circuits and power controls]
分类和应用:
文件页数/大小: 2 页 / 133 K
品牌: SANREX [ SANREX CORPORATION ]
 浏览型号PK90GB的Datasheet PDF文件第2页  
THYRISTOR MODULE
PK
(PD,PE,KK)
90GB
UL;E76102 M)
Power Thyristor/Diode Module
PK90GB
series are designed for various rectifier circuits
and power controls. For your circuit application. following internal connections and wide
voltage ratings up to 800V are available. and electrically isolated mounting base make
your mechanical design easy.
26MAX
93.5MAX
80
3
2
+
1
K2
G2
2- 6.5
200 A/μs
dv/dt 500V/μs
(Applications)
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
Static switches
di/dt
16.5
23
23
K2
G2
3
2
A1K2
(K2)
K1
(A2) G1
1
K2
G2
3
2
K1
G1
Internal Configurations
13
I
T(AV)
90A, I
T(RMS)
140A, I
TSM
1800A
~
3-M5
A1K2
(K2)
K1
(A2)
1
110TAB
30MAX
K2
3
2
2
K2
G2
K1
(A2) G1
1
A1K2
(K2)
K1
(A2) G1
1
1
(A1)
21
PK
PE
PD
KK
Unit:
A
■Maximum
Ratings
Ratings
Symbol
V
RRM
V
RSM
V
DRM
Symbol
Item
*Repetitive
Peak Reverse Voltage
*Non-Repetitive
Peak Reverse Voltage
*Non-Repetitive
Peak Reverse Voltage
Item
PK90GB40 PD90GB40
KK90GB40 PE90GB40
400
480
400
Conditions
Single phase, half wave, 180°
conduction, Tc:88℃
Single phase, half wave, 180°
conduction, Tc:88℃
1
cycle,
2
PK90GB80 PD90GB80
KK90GB80 PE90GB80
800
960
800
Ratings
90
140
1650
/
1800
15000
10
3
3
10
5
Unit
V
V
V
Unit
A
A
A
A
2
S
W
W
A
V
V
A
/
μs
V
N�½��½�
(㎏f�½�B)
g
I
T AV)
*Average
On-State Current
I
T RMS)
*R.M.S.
On-State Current
I
TSM
I
2
t
P
GM
(AV)
P
G
*Surge
On-State Current
*I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage (Forward)
Peak Gate Voltage (Reverse)
Critical Rate of Rise of On-State Current
*Isolation
Breakdown Voltage (R.M.S.)
*Operating
Junction Temperature
*Storage
Temperature
Mounting
Torque
Mass
Mounting
(M6)
Terminal(M5)
50Hz/60Hz, peak Value, non-repetitive
Value for one cycle of surge current
I
FGM
V
FGM
V
RGM
di/dt
V
ISO
Tj
Tstg
I
G
=100mA,
Tj=25℃,
D
1 2
V
DRM
G
/
dt=0.1A
/
V
dI
μs
A.C.1minute
200
2500
−40 to +125
−40 to +125
Recommended Value 2.5-3.9(25-40)
Recommended Value 1.5-2.5(15-25)
4.7(48)
2.7(28)
170
■Electrical
Characteristics
Symbol
I
DRM
I
RRM
V
TM
I
GT
/V
GT
V
GD
tgt
dv/dt
I
H
I
L
Item
Repetitive Peak Off-State Current, max.
*Repetitive
Peak Reverse Current, max.
*Peak
On-State Voltage, max.
Gate Trigger Current/Voltage, max.
Non-Trigger Gate, Voltage. min.
Turn On Time, max.
Critical Rate of Rise of Off-State Voltage, min.
Holding Current, typ.
Lutching Current, typ.
Conditions
at V
DRM
, single phase, half wave, Tj=125℃
at V
DRM
, single phase, half wave, Tj=125℃
On-State Current 270A, Tj=125℃ Inst. measurement
Tj=25℃,I
T
=1A,V
D
=6V
Tj=125℃,V
D
1 2
V
DRM
I
T
=90A,
G
=100mA,
I
Tj=25℃,
D
1 2
V
DRM
G
/
dt=0.1A
/
V
dI
μs
Tj=125℃, V
D
2 3
V
DRM
, Exponential wave.
Tj=25℃
Tj=25℃
Junction to case
Ratings
15
15
1.30
100
/
3
0.25
10
500
50
100
0.30
Unit
mA
mA
V
mA
/
V
V
μs
V
/
μs
mA
mA
/
W
Rth j-c)*Thermal Impedance, max.
*mark:Thyristor
and Diode part. No mark:Thyristor part
23