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PK PD,PE,KK 90GB
Gate Characteristics
On-State Voltage max
3
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１０
Peak Forward Gate Voltage（10V）�
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１０
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２�
Tj＝125℃�
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１０
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125℃�25℃� －30℃�
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１０
Maximum Gate Voltage that will not trigger any uni（t 0.25V）�
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１０
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Gate Curren（t mA）�
On-State Voltage（V）�
Average On-State Current Vs Maximum Allowable�
Case Temperature（Single phase half wave）
Average On-State Current Vs Power Dissipation�
（Single phase half wave）
１４０�
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Per one element
Per one element
2
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360。�
D.C.
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: Conduction Angle
θ＝180゜�
θ＝120゜�
θ＝90゜�
θ＝60゜�
D.C.
θ＝30゜�
2
θ＝30゜�
θ＝90゜� θ＝180゜�
360。�
θ＝60゜� θ＝120゜�
: Conduction Angle
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Average On-State Curren（t A）�
Average On-State Curren（t A）�
Surge On-State Current Rating�
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Transient Thermal Impedance
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Per one element
Ｔｊ=２５℃ start
Junction to case
１５００�
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Per one element
60Hz
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50Hz
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Time（cycles）�
Time t（sec）�
B６；Six pulse bridge connection�
Ｗ３；Three phase�
Output Current
W１；Bidirectional connection
B２；Two Pluse bridge connection
bidiretional connection
７５０�
Rth:0.8℃/W
Rth:0.6℃/W
Rth:0.4℃/W
Rth:0.2℃/W
Rth:0.1℃/W
Rth:0.8℃/W
Rth:0.6℃/W
Rth:0.4℃/W
Rth:0.2℃/W
Id（Ar.m.s.）�
W3
B6
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4５０�
３００�
1５０�
Rth:0.1℃/W
Rth:0.8℃/W
Rth:0.4℃/W
Rth:0.3℃/W
Rth:0.2℃/W
Rth:0.1℃/W
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Id（Aav.）�
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B2
Id（Aav.）�
Id（Ar.m.s.）�
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W1
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Output Curren（t A）�
Ambient Temperature（℃）�
Ambient Temperature（℃）�Ambient Temperature（℃）�
24
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