THYRISTOR MODULE
（NON-ISOLATED
TYPE）
PWB130A
PWB130A
is a Thyristor module suitable for low voltage, 3 phase recifier applications.
●
I
T(AV)
130A
26.5max
(each device)
●
high Surge Current 3500 A (50/60Hz)
●
Easy Construction
●
Non-isolated. Mounting base as common Anode terminal
（Applications）
Welding power Supply
Various DC power Supply
93.5max
80
K3
3
（13）
K2
2
K1
1
K2 G2
2-
φ6.5
K1 G1
G3 K3
16.5
23
23
3-M5
6-♯110TAB
G2
G3 K3
A
K1 G1
30max
（21）
K3
3
K2
2
K1 K2
1
Unit：
A
■Maximum
Ratings
Symbol
V
RRM
V
RSM
V
DRM
Symbol
（
I
T AV）
（
I
T RMS）
Item
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Item
Average On-State Current
R.M.S. On-State Current
Surge On-State Current
I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage (Forward)
Peak Gate Voltage (Reverse)
Critical Rate of On-State Current
Operating Junction Temperature
Storage Temperature
Mounting
torque
Mass
Mounting
（M6）
Terminal（M5）
Ratings
PWB130A20
200
240
200
Conditions
Single phase, half wave, 180°
conduction, Tc：112℃
Single phase, half wave, 180°
conduction, Tc：112℃
1
cycle,
／
2
PWB130A30
300
360
300
PWB130A40
400
480
400
Ratings
130
204
3200
/
3500
51000
10
1
3
10
5
Unit
V
V
V
Unit
A
A
A
A
2
S
W
W
A
V
V
A
/
μs
℃
℃
N�½��½�
（kgf�½�B）
g
I
TSM
I
2
t
P
GM
（AV）
P
G
50Hz/60Hz, peak value, non-repetitive
I
FGM
V
FGM
V
RGM
di
/
dt
Tj
Tstg
I
G
＝200mA，
Tj＝25℃，
D
＝
1 2
V
DRM
，
G
/
dt＝1A
/
V
／
dI
μs
50
−30
to
＋150
−30
to
＋125
Recommended 2.5-3.9（25-40）
Recommended 1.5-2.5（15-25）
4.7（48）
2.7（28）
170
■Electrical
Characteristics
Symbol
I
DRM
I
RRM
V
TM
I
GT
V
GT
V
GD
tgt
dv
/
dt
I
H
Item
Repetitive Peak Off-State Current, max.
Repetitive Peak Reverse Current, max.
Peak On-State Voltage, max.
Gate Trigger Current, max.
Gate Trigger Voltage, max.
Non-Trigger Gate, Voltage. min.
Turn On Time, max.
Critical Rate of Rise of Off-State Voltage, min.
Holding Current, typ.
Conditions
at V
DRM
, single phase, half wave, Tj＝150℃
at V
DRM
, single phase, half wave, Tj＝150℃
On-State Current 410A, Tj＝150℃ Inst. measurement
Tj＝25℃，I
T
＝1A，V
D
＝6V
Tj＝25℃，I
T
＝1A，V
D
＝6V
Tj＝150℃，V
D
＝
1 2
V
DRM
／
I
T
＝100A，
G
＝200mA，
I
Tj＝25℃，
1
V
DRM
，
G
dt＝1A
μs
dI
/
V
D
＝／
/
2
Tj＝150℃，V
D
＝
2 3
V
DRM
，Exponential
wave.
／
Tj＝25℃
Junction to case（
1 3
Module）
／
50
70
0.2
0.25
10
Ratings
Mix. Typ. Min.
30
30
1.2
150
2
Unit
mA
mA
V
mA
/
V
mA
/
V
V
μs
V
/
μs
mA
℃
/
W
Rth j-c） Thermal Impedance, max.
（
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
SANREX [ SANREX CORPORATION ]
