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QBB100A60 参数 Datasheet PDF下载

QBB100A60图片预览
型号: QBB100A60
PDF下载: 下载PDF文件 查看货源
内容描述: 晶体管模块 [TRANSISTOR MODULE]
分类和应用: 晶体晶体管功率双极晶体管
文件页数/大小: 2 页 / 116 K
品牌: SANREX [ SANREX CORPORATION ]
 浏览型号QBB100A60的Datasheet PDF文件第2页  
TRANSISTOR MODULE
QCA100A/QBB100A40/60
UL;E76102 M)
QCA100A
and
QBB100A
is a dual Darlington power
transistor modules with two high speed, high power
Darlington transistors. Each transistor has a reverse
paralleled fast recovery diode.
95max
80±0.25
23
23
102.0max
63.0±0.2
(3.0) 15.8 15.8 15.8 15.8 15.8
6-M5
4�½�
φ5.5
(15.0)
B1
B2
B
2
E
2
E
2
B
2
62max
48±0.25
30
(Applications)
Motor Control(VVVF) AC/DC Servo, UPS,
,
Switching Power Supply, Ultrasonic Application
QCA
E2
B2X B2 C2E1
B1 C1
QBB
E2
B2 C2 E1
B1 C1
5.0
QCA100A…Series-connected type
QBB100A…Separate Type
I
C
=100A,
V
CEX
=400/600V
Low saturation voltage for higher efficiency.
Isolated mounting base
V
EBO
10V for faster switching speed.
6 12 6
B
2
X C
2
E
1
B
1
X
E
2
C
1
C1
C2
E1
(6.0)
M5×10
30max
110Tab
7
(8.0)
(4.0)
(1.5)
3.4
10.5
4-
φ5.4
E2
NAME PLATE
21
■Maximum
Ratings
Symbol
V
CBO
V
CEX
V
EBO
I
C
−I
C
I
B
P
T
T
j
Tstg
V
ISO
Item
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Reverse Collector Current
Base Current
Total power dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Mounting
Torque
Mass
Mounting(M5)
Terminal(M5)
QCA100A/QBB100A
A.C.1minute
T
C
=25℃
( )pw≦1ms
V
BE
=−2V
Conditions
(Tj=25℃
unless otherwise specified)
Ratings
QCA100A40 QCA100A60
QBB100A40 QBB100A60
400
400
10
600
600
25.5
26.5
33.5max
(4.0)
(2.0)
40.0
52.0±0.2
68.0max
32.0
Unit:A
Unit
V
V
V
A
A
A
W
V
N�½�m
(㎏f�½�B)
g
100(200)
100
6
620
−40
to
+150
−40
to
+125
2500
2.7(28)
2.7(28)
360/340
Recommended Value 1.5-2.5(15-25)
Recommended Value 1.5-2.5(15-25)
Typical Value
■Electrical
Characteristics
Symbol
I
CBO
I
EBO
(SUS)
V
CEO
Item
Collector Cut-off Current
Emitter Cut-off Current
QCA100A40
QBB100A40
QCA100A60
QBB100A60
QCA100A40
QBB100A40
QCA100A60
QBB100A60
Conditions
V
CB
=V
CBO
V
EB
=V
EBO
Ratings
Min.
Max.
1.0
400
300
Unit
mA
mA
V
Ic=1A
450
400
Ic=20A,I
B2
=−5A
Ic=100A,V
CE
=2V/5V
Ic=100A,I
B
=1.4A
Ic=100A,I
B
=1.4A
Vcc=300V,Ic=100A
I
B1
=2A,I
B2
=−2A
−Ic=100A
Transistor part/Diode part
Collector Emitter
Sustaning Voltage
(SUS)
V
CEX
V
600
75/100
2.0
2.5
2.0
12.00
3.00
1.40
0.2/0.6
V
℃/W
μs
V
V
h
FE
V
CE(sat)
V
BE(sat)
ton
ts
tf
V
ECO
Rth(j-c)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
On Time
Switching Time
Storage Time
Fall Time
Collector-Emitter Reverse Voltage
Thermal Impedance
®
SanRex
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com