（Hi-β）
TRANSISTOR MODULE
QCA200BA60
UL;E76102 M）
（
QCA200BA60
is a dual Darlington power transistor module which has series-connected
ULTRA HIGH
h
FE
, high speed, high power Darlington transistors. Each transistor has a
reverse paralleled fast recovery diode (trr：200ns). The mounting base of the module is
electrically isolated from Semiconductor elements for simple heatsink construction,
V
CEX
＝600V
●
Low saturation voltage for higher efficiency.
●
ULTRA HIGH DC current gain h
FE
. h
FE
≧750
●
Isolated mounting base
●
V
EBO
10V for faster switching speed.
（Applications）
Motor Control（VVVF） AC/DC Servo, UPS,
,
Switching Power Supply, Ultrasonic Application
B2X
B2
E2
108max
93±0.5
4-
φ6.5
7.5 6.0
7.5
6.0
B
1
X
E
1
B
1
25.0
14.0
25.0
3-M6
L=10max
AMP110
t=0.5
30.0max
37.0max
C2E1
C1
B1X
E1
B1
33.0max
24.0max
E2
Unit：A
■Maximum
Ratings
Symbol
V
CBO
V
CEX
V
EBO
I
C
−I
C
I
B
P
T
T
j
Tstg
V
ISO
Item
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Reverse Collector Current
Base Current
Total power dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Mounting
Torque
Mass
A.C.1minute
Mounting
（M6）
Recommended Value 2.5-3.9（25-40）
Terminal M6） Recommended Value 2.5-3.9（25-40）
（
Typical Value
T
C
＝25℃
（ ）pw≦1ms
V
BE
＝−2V
Conditions
（Tj＝25℃
unless otherwise specified）
Ratings
QCA200BA60
600
600
10
200（400）
200
12
1250
−40
to
＋150
−40
to
＋125
2500
4.7（48）
4.7（48）
470
N�½�m
(㎏f�½�B)
g
Unit
V
V
V
A
A
A
W
℃
℃
■Electrical
Characteristics
Symbol
I
CBO
I
EBO
Item
Collector Cut-off Current
Emitter Cut-off Current
V
CB
＝V
CBO
V
EB
＝V
EBO
Ic＝1A
Ic＝40A，I
B2
＝−8A
Ic＝200A，V
CE
＝2.5V
Ic＝200A，I
B
＝0.26A
Ic＝200A，I
B
＝0.26A
Vcc＝300V，Ic＝200A
I
B1
＝0.4A，I
B2
＝−4A
Ic＝−200A
Vcc＝300V, Ic＝−200A,
−di/dt＝200A/μs,
V
BE
＝−5V
Transistor part
Diode part
200
0.1
0.3
450
600
750
2.5
3.0
2.0
8.0
2.0
1.8
V
ns
℃/W
μs
V
V
Conditions
Ratings
Min.
Typ.
Max.
2.0
800
Unit
mA
mA
V
（SUS）
Collector Emitter Sustaning
V
CEO
（SUS）
Voltage
V
CEX
h
FE
（sat）
V
CE
（sat）
V
BE
D.C. Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
On Time
Switching
Time
Storage Time
Fall Time
Collector-Emitter Reverse Voltage
Reverse Recovery time
Thermal Impedance
(junction to case)
ton
ts
tf
V
ECO
trr
Rth j-c）
（
SanRex
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
48±0.5
15
15
B
2
X
63.0max
●
I
C
＝200A,
C
2
E
1
E
2
C
1
B
2
E
2
SANREX [ SANREX CORPORATION ]
