TRANSISTOR MODULE
QCA50B/QCB50A40/60
UL;E76102 M
QCA50B
and
QCB50A
are dual Darlington power
transistor modules which have series-connected high speed,
high power Darlington transistors. Each transistor has a
reverse paralleled fast recovery diode.
I
C
50A, V
CEX
400/600V
Low saturation voltage for higher efficiency.
Isolated mounting base
V
EBO
10V for faster switching speed.
Applications
Motor Control VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
QCA
QCB
Unit
A
Maximum Ratings
Ratings
Symbol
V
CBO
V
CEX
V
EBO
I
C
I
C
I
B
P
T
T
j
Tstg
V
ISO
Item
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Reverse Collector Current
Base Current
Total power dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
QCA50B
Mounting
Torque
QCA50A
Mass
Mounting M6
Terminal M5
Mounting M5
A.C.1minute
Recommended Value 2.5 3.9 25 40
Recommended Value 1.5 2.5 15 25
Recommended Value 1.5 2.5 15 25
Recommended Value 1.0 1.4 10 14
Typical Value
T
C
25
40
=pw 1ms
V
BE
2V
Conditions
Tj 25
QCA50B40 QCA50B60
QCA50A40 QCA50A60
Unit
V
V
V
A
A
A
W
400
400
10
50 100
50
3
300
600
600
150
V
N m
f
B
g
Tj 25
40
125
2500
4.7 48
2.7 28
2.7 28
1.5 15
240/195
Terminal M4
QCA50B/QCA50A
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
CEO
SUS
Item
Collector Cut-off Current
Emitter Cut-off Current
QCA50B40
QCB50A40
QCA50B60
QCB50A60
QCA50B40
QCB50A40
QCA50B60
QCB50A60
Conditions
V
CB
V
CBO
V
EB
V
EBO
Ratings
Min.
Max.
1.0
300
300
Unit
mA
mA
V
Ic 1A
Collector Emitter
Sustaning Voltage
V
CEX
SUS
450
400
5A
V
600
75/100
2.0
2.5
1.0
12.0
2.0
1.4
0.4/1.3
V
/W
V
V
s
Ic 10A I
B2
h
FE
V
CE(sat)
V
BE(sat)
ton
ts
tf
V
ECO
Rth(j-c)
3
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
On Time
Switching Time
Storage Time
Fall Time
Collector-Emitter Reverse Voltage
Thermal Impedance (junction to case)
Ic 50A V
CE
2V/5V
Ic 50A I
B
0.67A
Ic 50A I
B
0.67A
Vcc 300V Ic 50A
1A
I
B1
1A I
B2
Ic 50A
Transistor part Diode part
SANREX [ SANREX CORPORATION ]
