（Hi-β）
TRANSISTOR MODULE
QCA75BA60
UL;E76102 M）
（
QCA75BA60
is a dual Darlington power transistor module which has series-connected
ULTRA HIGH
h
FE
, high speed, high power Darlington transistors. Each transistor has a
reverse paralleled fast recovery diode (trr：200ns). The mounting base of the module is
electrically isolated from Semiconductor elements for simple heatsink construction,
34max
13
94max
20
7
12 8
6.5
20
27
8 8 8 12
7
6.5
E1B1
E2B2
C2E1
E2
C1
●
I
C
＝75A,
V
CEX
＝600V
●
Low saturation voltage for higher efficiency.
●
ULTRA HIGH DC current gain h
FE
. h
FE
≧750
●
Isolated mounting base
●
V
EBO
10V for faster switching speed.
（Applications）
Motor Control（VVVF） AC/DC Servo, UPS,
,
Switching Power Supply, Ultrasonic Application
B2
E2
3�½�M5
80
4.5
2�½�
φ6.5
110TAB
6.5mm
C2E1
E2
C1
E1
B1
31max
（8）14.5
（2） （3）
4.5
Unit：A
■Maximum
Ratings
Symbol
V
CBO
V
CEX
V
EBO
I
C
−I
C
I
B
P
T
T
j
Tstg
V
ISO
Item
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Reverse Collector Current
Base Current
Total power dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Mounting
Torque
Mass
Termnal
（M5）
A.C.1minute
Recommended Value 1.5-2.5（15-25）
Typical Value
Mounting M6） Recommended Value 2.5-3.9（25-40）
（
T
C
＝25℃
（ ）pw≦1ms
V
BE
＝−2V
Conditions
（Tj＝25℃
unless otherwise specified）
Ratings
QCA75BA60
600
600
10
75（150）
75
4.5
350
−40
to
＋150
−40
to
＋125
2500
4.7（48）
2.7（28）
240
Unit
V
V
V
A
A
A
W
℃
℃
V
N�½�m
㎏f�½�B
g
■Electrical
Characteristics
Symbol
I
CBO
I
EBO
Item
Collector Cut-off Current
Emitter Cut-off Current
V
CB
＝V
CBO
V
EB
＝V
EBO
Ic＝1A
Ic＝15A，I
B2
＝−5A
Ic＝75A，V
CE
＝2.5V
Ic＝75A，I
B
＝100mA
Ic＝75A，I
B
＝100mA
Vcc＝300V，Ic＝75A
I
B1
＝150mA，I
B2
＝−1.5A
Ic＝−75A
Vcc＝300V，
−Ic＝75A，
−di/dt＝75AμA，
BE
＝−5V
V
transistor part
Diode part
200
0.35
1.3
450
600
750
2.5
3.0
2.0
8.0
2.0
1.8
V
ns
℃/W
μs
V
V
Conditions
Ratings
Min.
Typ.
Max.
1.0
300
Unit
mA
mA
V
（SUS）
Collector Emitter Sustaning
V
CEO
（SUS）
Voltage
V
CEX
h
FE
（sat）
V
CE
（sat）
V
BE
D.C. Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
On Time
Switching
Time
Storage Time
Fall Time
Collector-Emitter Reverse Voltage
Reverse Recovery time
Thermal Impedance
(junction to case)
ton
ts
tf
V
ECO
trr
Rth j-c）
（
SanRex
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
SANREX [ SANREX CORPORATION ]
