THYRISTOR MODULE
SBA500AA
UL;E76102 M）
（
Power Thyristor Module
SBA500AA
series are designed for high power rectifier control
applications. Two independent thyristor elements in a electrically isolated package enable
you to achieve flexible design, especially for AC switch application, idial terminal
location for bus bar connection helps both your mechanical design and mounting
procedure be more efficient. SBA series for two thyristors with blocking voltage up to
1600V are available.
Isolated mounting base
●
I
T AV）
500A, I
T RMS）
785A
（
（
●
di/dt 200 A/μs
●
dv/dt 500V/μs
（Applications）
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
Static switches
Internal Configurations
A1 K2
138max
60±0.2
60±0.2
K1
A2
4
2
5
7
K1
6-
φ6.5
78max
60±0.2
13.5
13.5
3
1
6
8
K2
G1
A1
28±1
60±1
K2
28±1
4-M4 depth8㎜
4-M8 depth15㎜
K1 A2
47±1
K1
G1
G2
K2
66max
Unit：A
■Maximum
Ratings
Symbol
V
DRM
V
RSM
V
RRM
Symbol
（
I
T AV）
（
I
T RMS）
Item
Repetitive Peak Off-State Voltage
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Reverse Voltage
Item
Average On-State Current
R.M.S. On-State Current
Surge On-State Current
It
2
SBA500AA40
400
480
400
Ratings
SBA500AA80
SBA500AA120
800
1200
960
1350
800
1200
31
8
48±1
SBA500AA160
1600
1700
1600
Ratings
500
785
9.1/10.0
416
15
5
5
10
5
Unit
V
V
V
Unit
A
A
kA
kA
2
S
W
W
A
V
V
A/
μs
V
℃
℃
N�½��½�
(㎏f�½�B)
N�½��½�
(㎏f�½�B)
N�½��½�
(㎏f�½�B)
g
Unit
mA
mA
V
mA
V
V
V/
μs
℃/W
Conditions
Single phase, half wave, 180°
conduction, Tc：66℃
Single phase, half wave, 180°
conduction, Tc：66℃
1
cycle,
／
2
I
TSM
It
2
50Hz/60Hz, peak Value, non-reqetitive
Value for one cycle of surge current
P
GM
（AV）
P
G
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
（Forward）
Peak Gate Voltage
（Reverse）
Critical Rate of Rise of On-State Current
Isolation Breakdown Voltage（R.M.S.）
Operating Junction Temperature
Storage Temperature
Mounting（M6）
Mounting
Torque
Terminal（M8）
Terminal（M4）
Mass
Recommended Value 2.5-3.9
(Recommended Value 25-40)
Recommended Value 8.8-10
(Recommended Value 90-105)
Recommended Value 1.0-1.4
Recommended Value 10-14)
Typical Value
Item
Repetitive Peak Off-State Current, max.
Repetitive Peak Reverse Current, max.
Peak On-State Voltage, max.
Gate Trigger Current, max.
Gate Trigger Voltage, max.
Non-Trigger Gate, Voltage. min.
Critical Rate of Rise of Off-State Voltage, min.
Conditions
at V
DRM
, Single phase, half wave, Tj＝125℃
at V
DRM
, Single phase, half wave, Tj＝125℃
I
T
=1500A
V
D
＝6V，I
T
＝1A
V
D
＝6V，I
T
＝1A
Tj＝125℃，V
D
＝
1 2
V
DRM
／
Tj＝125℃，V
D
＝
2 3
V
DRM
，exp,
waveform
／
Junction to case
I
G
＝200mA，
D
＝
1 2
V
DRM
，
G
/dt＝0.2A/
V
／
dI
μs
A.C. 1 minute
I
FGM
V
FGM
V
RGM
di/dt
V
ISO
Tj
Tstg
200
2500
−40 to ＋125
−40 to ＋125
4.7
(48)
11.0
(115)
1.5
(15)
1100
Ratings
150
150
1.45
200
3
0.25
500
0.085
■Electrical
Characteristics
Symbol
I
DRM
I
RRM
V
TM
I
GT
V
GT
V
GD
dv/dt
Rth j-c） Thermal Impedance, max.
（
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SANREX [ SANREX CORPORATION ]
