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SG16AA20 参数 Datasheet PDF下载

SG16AA20图片预览
型号: SG16AA20
PDF下载: 下载PDF文件 查看货源
内容描述: 晶闸管模块(隔离模具类) [THYRISTOR MODULE (ISOLATED MOLD TYPE)]
分类和应用:
文件页数/大小: 2 页 / 110 K
品牌: SANREX [ SANREX CORPORATION ]
 浏览型号SG16AA20的Datasheet PDF文件第2页  
THYRISTOR MODULE
(ISOLATED
MOLD TYPE)
SG16AA
UL:E76102 M)
SG16AA
is an isolated molded thyristor which is suitable fora wide range of industrial
and home electronics uses.
SG16AA
uses highly relible glass passivation.
I
T(AV)
=16A
23.0 MAX
39.2 MAX
2-
φ4.2±0.1
high
Surge Capability
Tab terminals for easy wiring.
(K)
(G)
A TAB250
K TAB250
G TAB187
20.1 MAX
21.6 MAX
30.0±0.1
13.9
#250
φ1.65
1
.T
1
(T
7.95±0.15
#180
φ1.3
(G)
6.35±0.15
8.2 MAX
22.5 MAX
2.6
A
G
K
10.8
(A)
Unit:
A
■Maximum
Ratings
Symbol
V
RRM
V
RSM
V
DRM
Symbol
I
T AV)
I
T RMS)
Item
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Item
Average On-State Current
R.M.S. On-State Current
Surge On-State Current
I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage(Forward)
Peak Gate Voltage(Reverse)
Critical Rate of Rise of On-State Current
Isolation Breakdown Voltage (R.M.S.)
Operating Junction Temperature
Storage Temperature
Mounting Torque(M4)
Mass
Ratings
SG16AA20
200
240
200
Conditions
Single phase, half wave, 180°
conduction, Tc:80℃
Single phase, half wave, 180°
conduction, Tc:80℃
1
cycle,
2
SG16AA40
400
480
400
SG16AA60
600
720
600
Ratings
16
25
220
/
250
260
10
1
3
10
5
Unit
V
V
V
Unit
A
A
A
A
2
S
W
W
A
V
V
A
/
μs
V
N�½��½�
(㎏f�½�B)
g
I
TSM
I
2
t
P
GM
(AV)
P
G
50Hz/60Hz, peak value, non-repetitive
2∼10ms
I
FGM
V
FGM
V
RGM
di/dt
V
ISO
Tj
Tstg
I
G
=100mA,
Tj=25℃,
D
1 2
V
DRM
G
/
dt=1A
/
V
dI
μs
A.C.1minute
100
2500
−40
to
+125
−40
to
+125
Recommended Value 1.0-1.4(10-14)
1.5(15)
23
■Electrical
Characteristics
Symbol
I
DRM
I
RRM
V
TM
I
GT
/V
GT
V
GD
tgt
dv/dt
I
H
Item
Repetitive Peak Off-State Current, max.
Repetitive Peak Reverse Current, max.
Peak On-State Voltage, max.
Gate Trigger Current/Voltage, max.
Non-Trigger Gate, Voltage. min.
Turn On Time, max.
Critical Rate of Rise of Off-State Voltage, min.
Holding Current, typ.
Conditions
at V
DRM
, single phase, half wave, Tj=125℃
at V
DRM
, single phase, half wave, Tj=125℃
On-State Current 50A, Tj=25℃ Inst. measurement
Tj=25℃,I
T
=1A,V
D
=6V
Tj=125℃,V
D
1 2
V
DRM
I
T
=16A,
G
=100mA,
I
Tj=25℃,
D
1 2
V
DRM
G
/
dt=1A
/
V
dI
μs
Tj=125℃, V
D
2 3
V
DRM
, Exponential wave.
Tj=25℃
Junction to case
Ratings
3
3
1.50
40
/
3
0.2
10
100
30
2.0
Unit
mA
mA
V
mA
/
V
V
μs
V
/
μs
mA
/
W
Rth j-c) Thermal Impedance, max.
SanRex
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com