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SMG04C60 参数 Datasheet PDF下载

SMG04C60图片预览
型号: SMG04C60
PDF下载: 下载PDF文件 查看货源
内容描述: 晶闸管 [THYRISTOR]
分类和应用:
文件页数/大小: 2 页 / 58 K
品牌: SANREX [ SANREX CORPORATION ]
 浏览型号SMG04C60的Datasheet PDF文件第2页  
THYRISTOR
SMG04C60
Thyristor
SMG04C60
is designed for full wave AC, DC control
applications. It can be used as an ON/OFF function or for phase control operation.
5.0±0.2
4.0±0.2
5.0±0.2
TO92
Typical Applications
Home Appliances : Electric Blankets, Starter for FL
Industrial Use
: SMPS, Solenoid for Breakers, Motor Controls, Heater Controls
2.3±0.2
2.0MAX
3
1
Features
I
T(AV)
=0.4A
High Surge Current
Low Voltage Drop
13.5±0.5
0.45
+0.2
- 0.1
0.45
+0.2
- 0.1
2
1 Gate
2A
3K
1
2
3
2.50
+0.6
- 0.2
2.50
+0.6
- 0.2
Identifying Code:
S04C6
Unit:
mm
■Maximum
Ratings
Symbol
V
RRM
V
RSM
V
DRM
I
T AV)
I
T RMS)
I
TSM
It
2
(Tj=25℃
unless otherwise specified)
Item
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S. On-State Current
Surge On-State Current
It
2
Reference
Ratings
600
720
600
Unit
V
V
V
A
A
A
A
2
S
W
W
A
V
V
g
Single phase, half wave, 180°conduction, Ta=55℃
,
Single phase, half wave, 180°conduction, Ta=55℃
,
50/60Hz,
1 2
cycle Peak value, non-repetitive
0.4
0.63
9.1
/
10
0.4
0.5
0.1
0.3
6
6
−40∼+125
−40∼+125
0.2
P
GM
(AV)
P
G
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
(Forward)
Peak Gate Voltage
(Reverse)
Operating Junction Temperature
Storage Temperature
Mass
I
FGM
V
FGM
V
RGM
Tj
Tstg
■Electrical
Characteristics
Symbol
I
DRM
I
RRM
V
TM
I
GT
V
GT
V
GD
I
H
Rth j-a
Item
Repetitive Peak Off-State Current
Repetitive Peak Reverse Current
Peak On-State Voltage
Gate Trigger Current
Gate Trigger Voltage
Non-Trigger Gate Voltage
Holding Current
Thermal Resistance
Reference
Tj=125℃, V
D
=V
DRM
, R
GK
=1kΩ
Tj=125℃, V
R
=V
RRM
, R
GK
=1kΩ
I
T
=1.2A,
Inst. measurement
V
D
=6V,
R
L
=100Ω
Tj=125℃, V
D
1 2
V
DRM
, R
GK
=1kΩ
Junction to ambient
Ratings
Min.
Typ.
Max.
0.5
0.5
1.2
100
0.8
0.2
300
150
Unit
mA
mA
V
μA
V
V
μA
/
W