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SMG08C60A 参数 Datasheet PDF下载

SMG08C60A图片预览
型号: SMG08C60A
PDF下载: 下载PDF文件 查看货源
内容描述: 晶闸管(表面贴装器件/非隔离) [THYRISTOR(Surface Mount Device/Non-isolated)]
分类和应用: 栅极
文件页数/大小: 3 页 / 476 K
品牌: SANREX [ SANREX CORPORATION ]
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THYRISTOR
( Surface Mount Device/Non-isolated)
SMG08C60A
Thyristor
SMG05C60A
is designed for full wave AC control applications.
It can be used as an ON/OFF function or for phase control operation.
Typical Applications
2.45 
0.15
±
4.1 
0.15
±
4.5 
0.1
±
1.6 
0.2
±
( Sensitive Gate)
1.5 
0.1
±
TO-89
2
Home Appliances : Electric Blankets, Starter for FL, other control applications
Industrial Use
: SMPS, Solenoid for Breakers, Motor Controls, Heater
Controls, other control applications
1
1 
0.1
±
2
3
0.42 
0.1
±
0.46 
0.1
±
(1.5)
2.2
0.9
0.4 
0.05
±
3
1
3 
0.1
±
Features
45゜
45゜
I
T(AV)
=0.5A
High Surge Current
Lead-Free Package
1.0
1.5
3.0
1.0
1.5
1.0
3.7
2
1.5
1.8
1 Gate
2A
3K
Identifying Code:
S05C6A
Unit:
mm
■Maximum
Ratings
Symbol
V
RRM
V
RSM
V
DRM
I
T AV)
I
T RMS)
I
TSM
I
2
t
P
GM
(AV)
P
G
(Tj=25℃
unless otherwise specified)
Item
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S. On-State Current
Surge On-State Current
I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
(Forward)
Peak Gate Voltage
(Reverse)
Operating Junction Temperature
Storage Temperature
Mass
Reference
Ratings
600
720
600
Unit
V
V
V
A
A
A
A
2
S
W
W
A
V
V
g
Single phase, half wave, 180°conduction, Tc=46℃
,
Single phase, half wave, 180°conduction, Tc=46℃
,
50Hz/60Hz,
1 2
cycle Peak value, non-repetitive
0.8
1.3
18
/
20
1.65
0.5
0.1
0.3
6
6
−40∼+125
−40∼+150
0.05
I
FGM
V
FGM
V
RGM
Tj
Tstg
■Electrical
Characteristics
Symbol
I
DRM
I
RRM
V
TM
I
GT
V
GT
V
GD
I
H
Rth j-a
Item
Repetitive Peak Off-State Current
Repetitive Peak Reverse Current
Peak On-State Voltage
Gate Trigger Current
Gate Trigger Voltage
Non-Trigger Gate Voltage
Holding Current
Thermal Resistance
Reference
Tj=125℃, V
D
=V
DRM
, R
GK
=1kΩ
Tj=125℃, V
R
=V
RRM
, R
GK
=1kΩ
I
T
=2.5A,
Inst. measurement
V
D
=6V,
R
L
=100Ω
Tj=125℃, V
D
1 2
V
DRM
, R
GK
=1kΩ
Junction to ambient
Ratings
Min.
Typ.
Max.
0.5
0.5
1.5
100
0.8
0.2
300
65
Unit
mA
mA
V
μA
V
V
μA
/
W