SMG12C60H 参数 Datasheet PDF下载

THYRISTOR

( Surface Mount Device/Non-isolated)

SMG12C60H

Thyristor

SMG12C60H

is designed for full wave AC control applications.

It can be used as an ON/OFF function or for phase control operation.

Typical Applications

（0.9）

TO-263

（7.0）

（4.0）

Home Appliances : Electric Blankets, Starter for FL, other control applications

●

Industrial Use

: SMPS, Solenoid for Breakers, Motor Controls, Heater

Controls, other control applications

●

10.4 

0.3

±

10 

0.3

±

（0.4）

（6.91）

4.5 

0.2

±

1.3 

0.2

±

（

RO

2×

.4

5）

9.2 

0.3

±

1.4 

0.5

±

Features

2.36 

0.15

±

1

2

3

1

2.4 

0.2

±

I

T(AV)

=12A

High Surge Current

●

Low Voltage Drop

●

Lead-Free Package

●

●

4.9 

0.5

±

1.27 

0.2

±

3

2.54 

0.15

±

0.5 

0.15

±

2.5 

0.2

±

0.8 

0.15

±

2.54 

0.25

±

5.08 

0.5

±

2

1K

2A

3 Gate

Identifying Code：

S12C6H

Unit：

mm

■Maximum

Ratings

Symbol

V

RRM

V

RSM

V

DRM

I

T AV）

（

I

T RMS）

（

I

TSM

I

2

t

P

GM

（AV）

P

G

（Tj=25℃

unless otherwise specified）

Item

Repetitive Peak Reverse Voltage

Non-Repetitive Peak Reverse Voltage

Repetitive Peak Off-State Voltage

Average On-State Current

R.M.S. On-State Current

Surge On-State Current

I

2

t

Peak Gate Power Dissipation

Average Gate Power Dissipation

Peak Gate Current

Peak Gate Voltage

（Forward）

Peak Gate Voltage

（Reverse）

Operating Junction Temperature

Storage Temperature

Mass

Reference

Ratings

600

720

600

Unit

V

V

V

A

A

A

A

2

S

W

W

A

V

V

℃

℃

g

Single phase, half wave, 180°conduction, Tc＝94℃

,

Single phase, half wave, 180°conduction, Tc＝94℃

,

50Hz/60Hz,

1 2

cycle Peak value, non-repetitive

／

12

18.8

180

/

197

167

5

0.5

2

6

10

−40∼＋125

−40∼＋150

1.2

I

FGM

V

FGM

V

RGM

Tj

Tstg

■Electrical

Characteristics

Symbol

I

DRM

I

RRM

V

TM

I

GT

V

GT

V

GD

I

H

（

Rth j-c

）

Item

Repetitive Peak Off-State Current

Repetitive Peak Reverse Current

Peak On-State Voltage

Gate Trigger Current

Gate Trigger Voltage

Non-Trigger Gate Voltage

Holding Current

Thermal Resistance

Reference

Tj＝125℃, V

D

＝V

DRM

Tj＝125℃, V

R

＝V

RRM

I

T

＝35A,

Inst. measurement

V

D

＝6V,

R

L

＝10Ω

Tj＝125℃, V

D

＝

1 2

V

DRM

／

Junction to case

Ratings

Min.

Typ.

Max.

2

2

1.5

30

1.4

0.2

15

1.8

Unit

mA

mA

V

mA

V

V

mA

℃

/

W

SanRex 50 Seaview Blvd. Port Washington, NY 11050 PH(516)625-1313 FX(516)625-8845 E-mail:semi@sanrex.com

（7.2）