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SQD300AA120 参数 Datasheet PDF下载

SQD300AA120图片预览
型号: SQD300AA120
PDF下载: 下载PDF文件 查看货源
内容描述: 晶体管模块 [TRANSISTOR MODULE]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 101 K
品牌: SANREX [ SANREX CORPORATION ]
 浏览型号SQD300AA120的Datasheet PDF文件第2页  
TRANSISTOR MODULE
SQD300AA120
UL;E76102 M)
SQD300AA120
is a Darlington power transistor module with a high speed, high power
Darlington transistor. The transistor has a reverse paralled fast recovery diode. The
mounting base of the module is electrically isolated from semiconductor elements for
simple heatsink construction.
V
CEX
=1200V
Low saturation voltage for higher efficiency.
High DC current gain h
FE
Isolated mounting base
(Applications)
Moter Control(VVVF) AC/DC Servo, UPS,
,
Switching Power Supply, Ultrasonic Application
20.0 20.0
108max
93±0.5
E
C
4-
φ6.5
EX
B
11.013.0 21.0
BX
EX
29.0
E
C
36.0max
B
25.5max
Unit:A
■Maximum
Ratings
Symbol
V
CBO
V
CEX
V
EBO
I
C
−I
C
I
B
P
T
T
j
Tstg
V
ISO
Item
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Reverse Collector Current
Base Current
Total power dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Mounting
Torque
Mass
(M6)
Terminal
(M6)
Terminal
(M4)
A.C.1minute
Recommended Value 2.5-3.9(25-40)
Recommended Value 2.5-3.9(25-40)
Recommended Value 1.0-1.4(10-14)
Typical Value
T
C
=25℃
V
BE
=−2V
Conditions
(Tj=25℃
unless otherwise specified)
Ratings
SQD300AA120
1200
1200
10
300
300
16
2000
−40
to
+150
−40
to
+125
2500
4.7(48)
4.7(48)
1.5(15)
470
g
N�½�m
(㎏f�½�B)
Unit
V
V
V
A
A
A
W
V
■Electrical
Characteristics
Symbol
I
CBO
I
EBO
h
FE
(sat)
V
CE
(sat)
V
BE
Item
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
On Time
Switching
Time
Storage Time
Fall Time
Collector-Emitter Reverse Voltage
Thermal Impedance
(junction to case)
V
CB
=1200V
V
EB
=10V
Conditions
Ratings
Min.
Max.
4.0
1200
1200
75
3.0
3.5
3.0
15.0
3.0
1.8
0.063
0.3
Unit
mA
mA
V
V
V
μs
V
℃/W
(SUS)
Collector Emitter Sustaning Voltage
V
CEX
Ic=60A,I
B2
=−12A
Ic=300A,V
CE
=5V
Ic=300A,I
B
=6A
Ic=300A,I
B
=6A
Vcc=600V,Ic=300A
I
B1
=6A,I
B2
=−6A
Ic=−300A
Transistor part
Dioe part
ton
ts
tf
V
ECO
Rth j-c)
SanRex
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
41.5max
2-M4
×7.5
2-M6
×13
63max
BX
48±0.5
I
C
=300A,