TRANSISTOR MODULE
SQD300A40/60
UL;E76102 M）
（
SQD300A
is a Darlington power transistor module which a high speed, high power
Darlington transistor. The transistor has a reverse paralled fast recovery diode. The
mounting base of the module is electrically isolated from semiconductor elements for
simple heatsink construction,
V
CEX
＝400/600V
●
Low saturation voltage for higher efficiency.
●
High DC current gain h
FE
●
Isolated mounting base
●
V
EBO
10V for faster switching speed.
（Applications）
Motor Control（VVVF） AC/DC Servo, UPS,
,
Switching Power Supply, Ultrasonic Application
BX
EX
E
C
108max
93±0.5
E
C
4-
φ6.5
20.0 20.0
EX
B
11.013.0 21.0
2-M6
×13
29.0
36.0max
B
25.5max
Unit：A
■Maximum
Ratings
Symbol
V
CBO
V
CEX
V
EBO
I
C
−I
C
I
B
P
T
T
j
Tstg
V
ISO
Item
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Reverse Collector Current
Base Current
Total power dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Mounting
Torque
Mass
Mounting
（M6）
Terminal（M6）
Terminal（M4）
A.C.1minute
T
C
＝25℃
（ ）=pw≦1ms
V
BE
＝−2V
Conditions
（Tj＝25℃
unless otherwise specified）
Ratings
SQD300A40 SQD300A60
400
400
10
300（600）
300
18
1380
−40
to
＋150
−40
to
＋125
2500
4.7（48）
4.7（48）
1.5（15）
460
g
N�½�m
(㎏f�½�B)
Recommended Value 2.5-3.9（25-40）
Recommended Value 2.5-3.9（25-40）
Recommended Value 1.0-1.4（10-14）
Typical Value
600
600
Unit
V
V
V
A
A
A
W
℃
℃
V
■Electrical
Characteristics
Symbol
I
CBO
I
EBO
（SUS）
V
CEO
Item
Collector Cut-off Current
Emitter Cut-off Current
SQD300A40
Collector Emitter
Sustaning Voltage
SQD300A60
SQD300A40
SQD300A60
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
On Time
Switching Time
Storage Time
Fall Time
Collector-Emitter Reverse Voltage
Thermal Impedance
(junction to case)
V
CB
＝V
CBO
V
EB
＝V
EBO
Ic＝1A
Conditions
Ratings
Min.
Max.
3.0
1000
300
450
400
600
75
100
2.0
2.5
2.0
12.0
3.0
1.4
0.09
0.3
Unit
mA
mA
V
V
（SUS）
V
CEX
Ic＝60A，I
B2
＝−10A
Ic＝300A，V
CE
＝2V
Ic＝300A，V
CE
＝5V
Ic＝300A，I
B
＝4.0A
Ic＝300A，I
B
＝4.0A
Vcc＝300V，Ic＝300A
I
B1
＝6A，I
B2
＝−6A
−Ic＝300A
Transistor part
Diode part
h
FE
V
CE(sat)
V
BE(sat)
ton
ts
tf
V
ECO
Rth(j-c)
℃/W
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
41.5max
2-M4
×7.5
μs
V
63max
BX
48±0.5
●
I
C
＝300A,
V
V
SANREX [ SANREX CORPORATION ]
