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TMG10C60 参数 Datasheet PDF下载

TMG10C60图片预览
型号: TMG10C60
PDF下载: 下载PDF文件 查看货源
内容描述: TRIAC (非绝缘型) [TRIAC(NON-ISOLATED TYPE)]
分类和应用: 触发装置三端双向交流开关
文件页数/大小: 2 页 / 118 K
品牌: SANREX [ SANREX CORPORATION ]
 浏览型号TMG10C60的Datasheet PDF文件第2页  
TRIAC(NON-ISOLATED TYPE)
TMG10C60
TMG10C60
are non-isolated triac suitable for wide range of applications
like copier, microwave oven, solid state switch, motor control, light and
heater control.
10A
surge capability 110A
Non-isolated type
High
I
T RMS)
F
D
H
A
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
Min
5.58
8.38
4.40
1.15
0.35
9.66
0.75
1.14
12.70
14.48
Millimeters
Typ
6.40
8.60
4.50
1.27
0.45
10.10
16.25
3.83
0.85
1.27
2.54
13.50
15.00
Max
7.49
8.90
4.70
1.39
0.60
10.28
0.95
1.40
14.27
15.87
M
G
T1
G
L
J
K
1
2
I
3
E
C
1T
2.
T
3 Gate
B
T2
Unit:
A
■Maximum
Ratings
Symbol
V
DRM
Symbol
I
T RMS)
I
TSM
I
2
t
P
GM
(AV)
P
G
(Tj=25℃
unless otherwise specified)
Item
Repetitive Peak Off-State Voltage
Item
R.M.S. On-State Current
Surge On-State Current
I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Mass
Tc=103℃
Ratings
TMG10C60
600
Conditions
One cycle, 50Hz/60Hz, peak, non-repetitive
1ms∼10ms
Ratings
10
100
/
110
50
5
0.5
2
10
−40
to
+125
−40
to
+125
2
Unit
V
Unit
A
A
A
2
S
W
W
A
V
g
I
GM
V
GM
Tj
Tstg
■Electrical
Characteristics
Symbol
I
DRM
V
TM
I
GT1
I
GT1
I
GT3
I
GT3
Item
Reptitive Peak Off-State Current
Peak On-State Voltage
1
2
3
4
1
2
3
4
Non-Trigger Gate Voltage
Critical Rate of Rise off-State
Voltage at commutation
Conditions
V
D
=V
DRM
, Single phase, half wave, Tj=125℃
I
T
=15A,
Inst. measurement
Ratings
Mon. Typ. Max.
2
1.4
30
30
30
1.5
1.5
1.5
0.2
10
20
Unit
mA
V
Gate Trigger Current
V
D
=6V,R
L
=10Ω
mA
V
GT1
V
GT1
V
GT3
V
GT3
Gate Trigger Voltage
V
D
=6V,R
L
=10Ω
V
V
GD
〔dv
/
dt〕
c
I
H
Tj=125℃,V
D
1 2
V
DRM
Tj=125℃,
/
dt〕
〔di
c=−5A
/
ms,V
D
2 3
V
DRM
Junction to case
V
V
/
μs
mA
1.8
/
W
Holding Current
Rth j-c) Thermal Impedance
15