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TMG8C60F 参数 Datasheet PDF下载

TMG8C60F图片预览
型号: TMG8C60F
PDF下载: 下载PDF文件 查看货源
内容描述: 隔离模三端双向可控硅适用于广泛的应用领域 [Isolated Mold Triac Suitable for wide range of Applications]
分类和应用: 触发装置可控硅三端双向交流开关
文件页数/大小: 2 页 / 118 K
品牌: SANREX [ SANREX CORPORATION ]
 浏览型号TMG8C60F的Datasheet PDF文件第2页  
TRIAC
( ISOLATED TYPE )
TMG8C60F
UL;E76102 M)
TMG8C40/60F
are isolated mold triac suitable for wide range of applications like
copier, microwave oven, solid state switch, motor control, light and heater control.
8A
High surge capability 88A
Full molded isolated type
I
T RMS)
3.± .
0 03
1 .± .
00 03
45 02
.± .
28 02
.± .
1 .± .
50 03
3.± . 85 03
6 03 .± .
26 02
.± .
07 ± .
. 01
Solder Dip
T1
G
1 .± .
40 05
07 ± .
. 01
1 2 3 25 ± .
. 02
50 ± .
. 05
1T
2.
T
3 Gate
T2
Unit:
A
■Maximum
Ratings
Symbol
V
DRM
Symbol
I
T RMS)
I
TSM
I
2
t
P
GM
(AV)
P
G
(Tj=25℃
unless otherwise specified)
Item
Repetitive Peak Off-State Voltage
Item
R.M.S. On-State Current
Surge On-State Current
I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Isolation Breakdown Voltage(R.M.S.)
Operating Junction Temperature
Storage Temperature
Mass
Tc=89℃
Ratings
TMG8C40F
400
Conditions
One cycle, 50Hz/60Hz, peak, non-repetitive
TMG8C60F
600
Ratings
8
80
/
88
32
5
0.5
2
10
A.C.1 minute
1500
−40 to +125
−40 to +125
2
Unit
V
Unit
A
A
A
2
S
W
W
A
V
V
g
I
GM
V
GM
V
ISO
Tj
Tstg
■Electrical
Characteristics
Symbol
I
DRM
V
TM
I
GT1
I
GT1
I
GT3
I
GT3
V
GT1
Item
Reptitive Peak Off-State Current
Peak On-State Voltage
1
2
3
4
1
2
3
4
Non-Trigger Gate Voltage
Critical Rate of Rise off-State
Voltage at commutation
Conditions
V
D
=V
DRM
, Single phase, half wave, Tj=125℃
I
T
=12A,
Inst. measurement
Ratings
Min.
Typ. Max.
2
1.4
30
30
30
1.5
1.5
1.5
0.2
10
15
Unit
mA
V
Gate Trigger Current
V
D
=6V,R
L
=10Ω
mA
V
GT1
V
GT3
V
GT3
Gate Trigger Voltage
V
D
=6V,R
L
=10Ω
V
V
GD
〔dv
/
dt〕
c
I
H
Tj=125℃,V
D
1 2
V
DRM
Tj=125℃,
/
dt〕
〔di
c=−4A
/
ms,V
D
2 3
V
DRM
Junction to case
V
V
/
μs
mA
3.7
/
W
Holding Current
Rth j-c) Thermal Impedance
3