Ordering number : ENN7479
12A01S
PNP Epitaxial Planar Silicon Transistor
12A01S
Low-Frequency
General-Purpose Amplifier Applications
Applications
•
Package Dimensions
unit : mm
2106A
[12A01S]
0.3
0.4 0.8 0.4
1.6
Low-frequency Amplifier, muting circuit.
Features
•
•
•
0.5 0.5
1.6
1 : Base
2 : Emitter
3 : Collector
SANYO : SMCP
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Mounted on a glass-epoxy board (20!30!1.6mm)
Conditions
Ratings
--15
--12
--5
--500
--1.0
200
150
--55 to +150
Unit
V
V
V
mA
A
mW
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE
fT
VCB=--12V, IE=0
VEB=-
-4V, IC=0
VCE=--2V, IC=--10mA
VCE=--2V, IC=--50mA
300
490
Conditions
Ratings
min
typ
max
--0.1
--0.1
700
MHz
Unit
µA
µA
Marking : XP
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O2203 TS IM TA-100567 No.7479-1/4
0.1max
•
Large current capacitance.
Low collector-to-emitter saturation voltage (resistance).
RCE (sat) typ.=0.57Ω [IC=0.5A, IB=25mA].
Ultrasmall package facilitates miniaturization in end
products.
Small ON-resistance (Ron).
0.75
0.6
0 to 0.1
3
1
2
0.2
0.1
Continued on next page.
SANYO [ SANYO SEMICON DEVICE ]
