15C02MH
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=12V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=50mA
VCE=2V, IC=50mA
VCB=10V, f=1MHz
IC=400mA, IB=20mA
IC=400mA, IB=20mA
IC=10μA, IE=0A
IC=1mA, RBE=∞
IE=10μA, IC=0A
See specified Test Circuit.
20
15
5
30
165
25
300
440
4
140
0.9
280
1.2
Conditions
Ratings
min
typ
max
100
100
800
MHz
pF
mV
V
V
V
V
ns
ns
ns
Unit
nA
nA
Switching Time Test Circuit
PW=20μs
D.C.≤1%
INPUT
IB1
OUTPUT
IB2
VR
50Ω
+
220μF
VBE= --5V
+
470μF
VCC=5V
RB
RL
IC=20IB1= --20IB2=400mA
Ordering Information
Device
15C02MH-TL-E
Package
MCPH3
Shipping
3,000pcs./reel
memo
Pb Free
1000
IC -- VCE
2
30.0
0.0mA
mA
900
1
mA
0.0
7.0m
A
5.0mA
1200
IC -- VBE
VCE=2V
Collector Current, IC -- mA
700
600
500
400
300
200
100
0
0
3.0mA
2.0mA
Collector Current, IC -- mA
800
1000
800
1.5mA
600
400
0.6mA
0.3mA
200
IB=0mA
100
200
300
400
500
600
700
800
900
1000
0
0
0.2
0.4
0.6
0.8
1.0
1.2
IT05038
Collector-to-Emitter Voltage, VCE -- mV
IT05037
Base-to-Emitter Voltage, VBE -- V
Ta=7
5
°
1.0mA
C
25
°
C
--25
°
C
No.7354-2/6
SANYO [ SANYO SEMICON DEVICE ]
