15GN03MA
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
Symbol
ICBO
IEBO
hFE
fT
Cob
Cre
⏐S21e⏐
NF
2
Conditions
VCB=10V, IE=0A
VEB=2V, IC=0A
VCE=5V, IC=10mA
VCE=5V, IC=20mA
VCB=10V, f=1MHz
VCE=5V, IC=20mA, f=0.4GHz
VCE=3V, IC=2mA, f=0.4GHz
Ratings
min
typ
max
0.1
1
100
1.0
1.5
0.95
0.65
10
13
1.6
1.25
180
Unit
μA
μA
GHz
pF
pF
dB
dB
Ordering Information
Device
15GN03MA-TL-E
Package
MCP
Shipping
3,000pcs./reel
memo
Pb Free
100
90
IC -- VCE
0.8mA
0.7mA
0.6mA
0.5mA
80
70
IC -- VBE
VCE=5V
Collector Current, IC -- mA
Collector Current, IC -- mA
80
70
60
50
40
30
20
10
0
0
2
4
6
60
50
40
30
20
10
0.4mA
0.3mA
0.2mA
0.1mA
IB=0mA
8
10
IT08096
0
0
0.2
0.4
0.6
0.8
1.0
1.2
IT08097
Collector-to-Emitter Voltage, VCE -- V
3
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
3
f T -- IC
VCE=5V
Gain-Bandwidth Product, f T -- GHz
2
VCE=5V
DC Current Gain, hFE
2
1.0
7
100
5
7
5
1.0
2
3
5
7
10
2
3
5
Collector Current, IC -- mA
100
IT08098
7
3
1.0
2
3
5
7
10
2
3
5
Collector Current, IC -- mA
7 100
IT08099
No. A1108-2/8
SANYO [ SANYO SEMICON DEVICE ]
