Ordering number : EN2006C
2SA1417 / 2SC3647
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SA1417 / 2SC3647
Features
•
•
•
High-Voltage Switching
Applications
Adoption of FBET, MBIT processes.
High breakdown voltage and large current capacity.
Ultrasmall size making it easy to provide high-density small-sized hybrid ICs.
Specifications
( ) : 2SA1417
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Mounted on a ceramic board (250mm
!0.8mm)
2
Conditions
Ratings
(-
-)120
(-
-)100
(-
-)6
(-
-)2
(-
-)3
500
1.5
150
--55 to +150
Unit
V
V
V
A
A
mW
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
Conditions
VCB=(--)100V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)5V, IC=(-
-)100mA
VCE=(--)10V, IC=(--)100mA
VCB=(--)10V, f=1MHz
IC=(--)1A, IB=(-
-)100mA
IC=(--)1A, IB=(-
-)100mA
100*
120
(25)16
(--0.22)0.13
(--)0.85
(-
-0.6)0.4
(--)1.2
Ratings
min
typ
max
(--)100
(--)100
400*
MHz
pF
V
V
Unit
nA
nA
Continued on next page.
*
; The 2SA1417 / 2S3647 are classified by 100mA hFE as follws:
Rank
R
S
T
hFE
100 to 200
140 to 280
200 to 400
Marking 2SA1417: AC
2SC3647: CC
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80906 / 22006EA MS IM / O3103TN (KT) / 71598HA (KT) / 3277KI / N255MW, TS No.2006-1/5
SANYO [ SANYO SEMICON DEVICE ]
