2SA2023/2SC5611
Continued on preceding page.
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
V(BR)CBO IC=(–)1mA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO IE=(–)1mA, IC=0
ton
See specified Test Circuit
tstg
tf
See specified Test Circuit
See specified Test Circuit
Conditions
Ratings
min
(–)80
(–)60
(–)5
0.1
0.5
0.1
typ
max
Unit
V
V
V
µs
µs
µs
Switching Time Test Circuit
IB1
IB2
RB
RL=10Ω
+
100µF
VBE=--5V
20IB1=--20IB2=IC=2A
+
470µF
VCC=20V
OUTPUT
PW=20µs
D.C.≤1%
INPUT
VR
50Ω
(For PNP, the polarity is reversed.)
--6
IC -- VBE
2SA2023
VCE=--2V
Collector Current, IC – A
6
IC -- VBE
2SC5611
VCE=2V
--5
5
Collector Current, IC – A
--4
4
--3
3
C
20
°
Ta=
1
--40
°
C
25
°
C
--2
25
°
C
--1
1
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
IT00512
0
0
0.2
0.4
0.6
0.8
1.0
1.2
IT00513
Base-to-Emitter Voltage, VBE – V
1000
7
5
Base-to-Emitter Voltage, VBE – V
1000
7
5
hFE -- IC
2SA2023
VCE=--2V
hFE -- IC
2SC5611
VCE=2V
Ta=120°C
25°C
--40°C
DC Current Gain, hFE
2
DC Current Gain, hFE
3
Ta=120°C
25°C
--40°C
3
2
100
7
5
3
2
100
7
5
3
2
10
--0.01
2
3
5 7 --0.1
2
3
Collector Current, IC – A
5 7 --1.0
2
3
5 7 --10
IT00514
10
0.01
2
3
5 7 0.1
2
3
Collector Current, IC – A
5 7 1.0
--40
°
2
3
C
2
Ta=
1
20
°
C
5 7 10
IT00515
No.6336–2/4
SANYO [ SANYO SEMICON DEVICE ]
