Ordering number : ENA0437A
2SB1739 / 2SD2720
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SB1739 / 2SD2720
Features
•
•
•
•
Compact Motor Driver
Applications
Low saturation voltage.
Contains diode between collector and emitter.
Contains bias resistance between base and emitter.
Large current capacity.
Specifications
( ) : 2SB1739
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
(--)40
(--)30
(-
-)6
(-
-)3
(-
-)5
1
15
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Diode Forwad Voltage
Base-to-Emitter Resistance
Symbol
ICBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO1
V(BR)CEO2
VF
RBE
Conditions
VCB=(--)30V, IE=0A
VCE=(--)2V, IC=(--)0.5A
VCE=(--)2V, IC=(--)2A
VCE=(--)2V, IC=(--)0.5A
VCB=(--)10V, f=1MHz
IC=(--)2A, IB=(-
-)100mA
IC=(--)2A, IB=(-
-)100mA
IC=(--)10µA, IE=0A
IC=(--)10µA, RBE=∞
IC=(--)10mA, RBE=∞
IF=(--)0.5A
0.8
(-
-)40
(-
-)40
(-
-)30
(--)1.5
Ratings
min
70
50
100
(55)40
(--0.28)0.23
(-
-0.6)0.5
(--)1.5
MHz
pF
V
V
V
V
V
V
kΩ
typ
max
(--)1.0
Unit
µA
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83006 MS IM / 72006EA MS IM TC-00000064 No. A0437-1/5
SANYO [ SANYO SEMICON DEVICE ]
