Ordering number : EN5293
NPN Triple Diffused Planar Silicon Transistor
Features
• High Speed : tf=100ns typ.
• High Breakdown voltage : VCBO=1500V.
• High reliability (Adoption of HVP process).
• Adoption of MBIT process.
Package Dimensions
unit: mm
2039C-TO3PML
[2SC5299]
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tc=25°C
Tj
Tstg
Conditions
1 : Base
2 : Collector
3 : Emitter
SANYO: TO3PML
Ratings
1500
800
6
10
25
3.0
70
150
–55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
C-E Saturation Voltage
B-E Saturation Voltage
DC Current Gain
Storage Time
Fall Time
Symbol
ICBO
ICES
VCEO(SUS)
IEBO
VCE(sat)
VBE(sat)
hFE(1)
hFE(2)
tstg
tf
Conditions
VCB=800V, IE=0
VCE=1500V, RBE=0
IC=100mA, IB=0
VEB=4V, IC=0
IC=8A, IB=2A
IC=8A, IB=2A
VCE=5V, IC=1A
VCE=5V, IC=8A
IC=6A, IB1=1.2A, IB2=–2.4A
IC=6A, IB1=1.2A, IB2=–2.4A
Ratings
min
typ
max
10
1.0
1.0
5
1.5
30
7
3.0
0.2
Unit
µA
mA
V
mA
V
V
800
20
4
0.1
µs
µs
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
11697YK (KOTO) TA-0588 No.5293-1/3
SANYO [ SANYO SEMICON DEVICE ]
