2SK2625LS
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
Qg
td(on)
tr
td(off)
tf
VSD
Conditions
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=200V, ID=5A, VGS=10V
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
IS=5A, VGS=0
Ratings
min
typ
700
220
110
20
20
20
50
25
0.88
1.2
max
Unit
pF
pF
pF
nC
ns
ns
ns
ns
V
Switching Time Test Circuit
VDD=200V
PW=1µs
D.C.≤0.5%
VGS=15V
ID=2.5A
RL=80.0Ω
D
VOUT
G
P.G
RGS=50Ω
2SK2625LS
S
6
ID -- VDS
V
10
8
7
ID -- VGS
VDS=10V
5
Tc= --25°C
25°C
Drain Current, ID -- A
4
15
Drain Current, ID -- A
V
8V
6
5
4
3
2
1
0
3
75°C
2
Tc=75
5
°
C
0
7V
1
VGS=6V
0
0
1
2
3
4
5
6
7
8
9
10
25
--25
°
C
10
°
C
15
20
IT03650
Drain-to-Source Voltage, VDS -- V
4.0
IT03649
3.5
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
Tc=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
3.5
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
3.0
3.0
2.5
ID=1A
2.5
2.0
5A
2.0
=2
ID
1.5
A,
2.5
=
ID
.5
V
A,
=1
S
G
0V
5V
=1
S
VG
2.5A
1.5
1.0
1.0
4
6
8
10
12
14
16
18
20
0.5
--50
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS -- V
IT03651
Case Temperature, Tc --
°C
IT03652
No.7081-2/4
SANYO [ SANYO SEMICON DEVICE ]
