SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5671 2N5672
DESCRIPTION
·With TO-3 package
·High current ,high speed
APPLICATIONS
·Intended for high current and fast
switching industrial applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
PARAMETER
2N5671
Collector-base voltage
2N5672
2N5671
V
CEO
V
EBO
I
C
I
B
P
D
T
j
T
stg
Collector-emitter voltage
2N5672
Emitter-base voltage
Collector current
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
120
7
30
10
140
200
-65~200
V
A
A
W
Open emitter
150
90
V
CONDITIONS
VALUE
120
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.25
UNIT
/W