SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N5883 2N5884
DESCRIPTION
·With TO-3 package
·Complement to type 2N5885 2N5886
·High power dissipations
APPLICATIONS
·They are intended for use in power linear
and switching applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
PARAMETER
2N5883
Collector-base voltage
2N5884
2N5883
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Collector-emitter voltage
2N5884
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
-80
-5
-25
-50
-7.5
200
200
-65~200
V
A
A
A
W
Open emitter
-80
-60
V
CONDITIONS
VALUE
-60
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
0.875
UNIT
/W
SAVANTIC [ Savantic, Inc. ]
