SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3 package
·Complement to type 2N5629 2N5630
·High power dissipations
APPLICATIONS
·For high voltage and high power
amplifier applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6029 2N6030
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
PARAMETER
2N6029
Collector-base voltage
2N6030
2N6029
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Collector-emitter voltage
2N6030
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
-120
-7
-16
-20
-5.0
200
200
-65~200
V
A
A
A
W
Open emitter
-120
-100
V
CONDITIONS
VALUE
-100
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
0.875
UNIT
/W