SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type 2N6034/6035/6036
·DARLINGTON
·High DC current gain
APPLICATIONS
·Designed for general-purpose amplifier
and low-speed switching applications
PINNING(see Fig.2)
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
2N6037 2N6038 2N6039
Absolute maximum ratings(Ta=
)
SYMBOL
PARAMETER
2N6037
V
CBO
Collector-base voltage
2N6038
2N6039
2N6037
V
CEO
Collector-emitter voltage
2N6038
2N6039
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
Open emitter
CONDITIONS
VALUE
40
60
80
40
60
80
5
4
8
0.1
40
150
-65~150
V
A
A
A
W
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
3.12
UNIT
/W