SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High breakdown voltage
·High power dissipation
APPLICATIONS
·Designed for high voltage inverters,
switching regulators,line operated amplifiers,
and switching power supplies applications
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6306
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
c
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
250
8
8
4
125
200
-65~200
UNIT
V
V
V
A
A
W