SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2N6386
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N6387
2N6388
Collector-emitter
saturation voltage
2N6386
2N6387/6388
2N6386
2N6387/6388
2N6386
2N6387/6388
2N6386
2N6387/6388
2N6386
I
CBO
Collector
cut-off current
2N6387
2N6388
2N6386
I
CEO
Collector
cut-off current
2N6387
2N6388
I
EBO
Emitter cut-off current
2N6386
h
FE-1
DC current gain
2N6387/6388
2N6386
h
FE-2
DC current gain
2N6387/6388
C
ob
Output capacitance
I
C
=10A ; V
CE
=3V
I
C
=5A ; V
CE
=3V
I
C
=8A ; V
CE
=3V
I
C
=3A ,I
B
=6mA
I
C
=0.2A, I
B
=0
SYMBOL
2N6386 2N6387 2N6388
CONDITIONS
MIN
40
60
80
TYP.
MAX
UNIT
V
V
CEsat-1
2.0
I
C
=5A ,I
B
=10mA
I
C
=8A ,I
B
=80mA
3.0
I
C
=10A ,I
B
=100mA
I
C
=3A ; V
CE
=3V
2.8
I
C
=5A ; V
CE
=3V
I
C
=8A ; V
CE
=3V
4.5
I
C
=10A ; V
CE
=3V
V
CB
=40V, V
BE
=-1.5V
T
C
=125
V
CB
=60V, V
BE
=-1.5V
T
C
=125
V
CB
=80V, V
BE
=-1.5V
T
C
=125
V
CE
=40V, I
B
=0
V
CE
=60V, I
B
=0
V
CE
=80V, I
B
=0
V
EB
=5V; I
C
=0
I
C
=3A ; V
CE
=3V
1000
20000
5.0
1.0
0.3
3.0
0.3
3.0
0.3
3.0
V
V
CEsat-2
Collector-emitter
saturation voltage
V
V
BE-1
Base-emitter
on voltage
V
V
BE-2
Base-emitter
on voltage
V
mA
mA
mA
100
I
E
=0 ; V
CB
=10V,f=0.1MHz
200
pF
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.92
UNIT
/W
2
SAVANTIC [ Savantic, Inc. ]
