SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
2N6495
SYMBOL
TYP.
MAX
UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
V
BE
I
CEV
I
CEO
I
EBO
h
FE
f
T
Collector-emitter sustaining voltage
I
C
=0.1 A ; I
B
=0
I
C
=10A; I
B
=1A
I
C
=10A; I
B
=1A
I
C
=10A ; V
CE
=3V
V
CE
=150V;V
BE(off)
=-1.5V
T
C
=150
V
CE
=40V; I
B
=0
V
EB
=7V; I
C
=0
I
C
=10A ; V
CE
=3V
I
C
=1 A ; V
CE
=10V
80
V
Collector-emitter saturation voltage
1.5
V
Base-emitter saturation voltage
2.0
V
Base -emitter on voltage
2.8
0.1
1.0
0.1
V
Collector cut-off current
mA
Collector cut-off current
mA
Emitter cut-off current
0.1
mA
DC current gain
10
60
Transition frequency
25
MHz
2
SAVANTIC [ Savantic, Inc. ]
