SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=-10mA ;I
B
=0
I
C
=-3A ;I
B
=-0.3A
I
C
=-3A;V
CE
=-5V
V
CB
=-80V; I
E
=0
V
EB
=-3V; I
C
=0
I
C
=-20mA ; V
CE
=-5V
I
C
=-1A ; V
CE
=-5V
I
C
=-3A ; V
CE
=-5V
I
C
=-0.5A ; V
CE
=-5V
20
40
20
MIN
-80
2SA1060
SYMBOL
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
f
T
TYP.
MAX
UNIT
V
-2.0
-1.8
-50
-50
V
V
µA
µA
200
20
MHz
h
FE-2
Classifications
R
40-80
Q
60-120
P
100-200
2
SAVANTIC [ Savantic, Inc. ]
