SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1567
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-25mA; IB=0
-50
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=-6A;IB=-0.3 A
VCB=-50V; IE=0
-0.35
-100
-100
V
µA
µA
IEBO
VEB=-6V; IC=0
hFE
IC=-6A ; VCE=-1V
IE=0.5A ; VCE=-12V
IE=0; VCB=-10V;f=1MHz
50
fT
Transition frequency
40
MHz
pF
COB
Output capacitance
330
Switching times
ton
Turn-on time
0.40
0.40
0.20
µs
µs
µs
IC=-6A;RL=4Ω
IB1=-IB2=-0.12A
VCC=-24V
ts
Storage time
Fall time
tf
2