SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=-1mA; I
B
=0
I
C
=-50µA; I
E
=0
I
E
=-50µA; I
C
=0
I
C
=-1A ;I
B
=-0.1A
I
C
=-1A ;I
B
=-0.1A
V
CB
=-120V; I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-0.1A ; V
CE
=-5V
I
C
=-0.1A; V
CE
=-5V
I
E
=0;f=1MHz ; V
CB
=-10V
60
MIN
-160
-160
-5
2SB1186A
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
C
OB
TYP.
MAX
UNIT
V
V
V
-2.0
-1.5
-1.0
-1.0
200
50
30
V
V
µA
µA
MHz
pF
h
FE
Classifications
D
60-120
E
100-200
2
SAVANTIC [ Savantic, Inc. ]
