SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1366
DESCRIPTION
·With TO-220F package
·Complement to type 2SD2058
·Low collector saturation voltage:
V
CE(SAT)
=-1.0V(Max) at I
C
=-2A,I
B
=-0.2A
·Collector power dissipation:
P
C
=25W(T
C
=25 )
APPLICATIONS
·With general purpose applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
T
a
=25
P
C
Collector dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
25
150
-55~150
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-60
-60
-7
-3
-0.5
2.0
W
UNIT
V
V
V
A
A