SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220C package
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
APPLICATIONS
·For low-frequency power amplifier and
low-speed switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2SB601
Absolute maximum ratings(Tc=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-DC
Collector current-Pulse
Base current-DC
T
C
=25
P
T
Total power dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
1.5
150
-55~150
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-100
-100
-7
-5
-8
-0.5
30
W
UNIT
V
V
V
A
A
A